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标    签:超高频MOS管AO4576

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具有极低的寄生电容,超高的开关频率,20A最大电流

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AO4576 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 20A < 5.8mΩ < 9.8mΩ Top View D D D D SOIC-8 Bottom View G S S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 100ns VSPIKE TA=25°C Power Dissipation B TA=100°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 20 12 144 25 31 36 3.1 1.2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 31 59 Maximum Junction-to-Lead Steady-State RθJL 16 Max 40 75 24 Units V V A A mJ V W °C Units °C/W °C/W °C/W Rev1: Nov. 2012 www.aosmd.com Page 1 of 5 AO4576 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 1.8 2.2 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 4.7 5.8 mΩ 6.2 7.6 VGS=4.5V, ID=20A 7.7 9.8 mΩ gFS Forward Transconductance VDS=5V, ID=20A 91 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 4 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1037 pF 441 pF 61 pF 0.7 1.5 2.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, tD(off) Turn-Off DelayTime RGEN=3Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 15.5 22.5 nC 6.8 10.5 nC 3.0 nC 3.6 nC 5.5 ns 3.3 ns 18 ns 4.3 ns 12.7 ns 17.2 nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Nov. 2012 www.aosmd.com Page 2 of 5 AO4576 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 4.5V 80 5V 80 7V 4V 60 60 VDS=5V ID(A) ID (A) 40 20 VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 VGS=4.5V 8 6 4 VGS=10V 2 0 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Normalized On-Resistance 40 125°C 20 25°C 0 0 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.6 1.4 VGS=10V ID=20A 1.2 1 VGS=4.5V ID=20A 0.8 0 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) RDS(ON) (mΩ) RDS(ON) (mΩ) 14 12 ID=20A 10 8 125°C 6 4 25°C 2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) IS (A) 1.0E+02 1.0E+01 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Rev1: Nov. 2012 www.aosmd.com Page 3 of 5 AO4576 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1400 VDS=15V 8 ID=20A 6 1200 Ciss 1000 800 Capacitance (pF) VGS (Volts) 4 2 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 600 Coss 400 200 0 Crss 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics ID (Amps) 1000.0 100.0 10.0 RDS(ON) 10µs 10µs 100µs 1.0 DC 1ms 10ms 0.1 0.0 0.01 TJ(Max)=150°C TC=25°C 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=75°C/W Power (W) 10000 1000 100 TA=25°C TJ(Max)=150°C TC=25°C 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to- Ambient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 ZθJA Normalized Transient Thermal Resistance 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 PD Ton T 1 10 100 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note F) 1000 Rev1: Nov. 2012 www.aosmd.com Page 4 of 5 AO4576 + VDC - Vgs Ig Gate Charge Test Circuit & Waveform + Vds VDC DUT - Vgs 10V Qgs Qg Qgd Vds Vgs Rg Resistive Switching Test Circuit & Waveforms RL Vds DUT + Vdd VDC - Charge 90% 10% Vgs Vgs td(on) tr ton td(off) tf toff Vds Id Vgs Rg Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E= AR 1/2 LIAR Vds Vgs + Vdd VDC - Id DUT Vgs B VD S S I AR Vds + DUT Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vgs Vds Isd L Isd IF trr dI/dt Vgs Ig + Vdd VDC - Vds I RM Vdd Rev1: Nov. 2012 www.aosmd.com Page 5 of 5

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