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# Victorycell

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• 日期： 2015-04-29
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Victorycell是IC工艺仿真软件，这是它的用户手册

] [Voidsize=][dL=
] Table 4-4 Deposit Parameters Parameter Type Default Units CONFORMAL CONSTRAINT DL DT logical integer real real false 0 0.2 0.1*time um minutes ISOTROPIC real 1.0 none MACHINE MATERIAL MATERIAL(“val”) MAX MIN RATE SIGMA STEPCOVERAGE character string string logical logical real real real true false 0.0 0.0 1.0 m/minute radians none THICKNESS real microns TIME VOIDSIZE IMPURITY real real real 0.0 infinity minutes microns 1/cm3 Description The Deposit statement is used to model all deposition processing steps. There are two separate deposition modes: Geometric and Physical. The Geometric mode corresponds to a simplified fast mode that approximates geometry where all material interfaces are either vertical or horizontal. The Physical mode allows a realistic description of the deposition processing. 95 Victory Cell User’s Manual DEPOSIT Statements Parameters applicable to both Geometric and Physical Modes COPPER, SILICON, OXIDE, NITRIDE, OXYNITRIDE, POLYSILICON, ALUMINUM, RESIST, BPSG, BSG, PSG, SOG, TUNGSTEN, TEOS, SiGE, SiC, TiSix, TiN, HfO2, Sapphire, ITO, GaN, InGaN, Cobalt, CoSi, Nickel, NiSi, Titanium, WSi, and MATERIAL(“string”) specify the material to be deposited. One of these material parameters is mandatory. The MATERIAL(“val”) parameter should only be used for user-defined materials, where val is the name of the user-defined material. Note: We recommend that you don’t use the name of one of the supported default parameters in the user-defined material string. For example, don’t use Material(“oxide”). Geometric Mode Parameters CONFORMAL or UNIFORM specifies conformal deposition on the whole surface. With this mode, THICKNESS is defined as the layer thickness deposited on every exposed surface in the structure. The thickness deposited on any sidewall equals the thickness deposited on any plane surface multiplied by the factor, STEPCOVERAGE. This type of deposition is the default in process simulators such as SSUPREM4. MAX or PLANAR specifies planarized deposition, where THICKNESS is measured from the highest point of the original surface. In this model, THICKNESS may be zero to planarize the structure to the existing highest point, or even negative to partially refill trenches in the structure. The default setting is TRUE. MIN specifies a planarized deposition, where THICKNESS is measured from the lowest point of the original surface. STEPCOVERAGE specifies a number between 0 and 1 that specifies the ratio between horizontal and vertical deposition. The default value is one, giving 100% conformal deposition. THICKNESS specifies the thickness, in microns, of the deposited layer. This parameter is mandatory in Geometric mode. It is very important to note that the exact definition of the thickness of the film is determined by the settings of the following logical parameters. One of the parameters below is required in Geometric mode. IMPURITY invokes an epitaxial like deposition. The allowed impurities are boron, bf2, arsenic, phosphorus, and antimony. If deposition is performed over the same material, the impurity will be added to the deposited material provided the layer underneath had some minimal bulk concentration of the same impurity. Physical Mode Parameters CONSTRAINT sets a region boundary for two neighbor regions with the same material. The default is NO. DL specifies an alternative spherical construction meshing algorithm for realistic DEPOSIT and ETCH statements. In general, it limits the maximum size of the mesh in modified regions to the specified value. A good value to choose as a starting point would be the depth of the etch or deposit. For example, if etching or depositing poly of 0.2um thickness in physical mode, try DL=0.2 for good results. 96 Victory Cell User’s Manual DEPOSIT Statements DT specifies the initial time step in minutes. Note that the time integration is usually a trade off between simulation time and accuracy. The simulator makes an internal guess as to the best choice for the time steps. In rare cases, you might want to change the behavior with this parameter. ISOTROPIC specifies a number between 0 and 1 that specifies the ratio between horizontal and vertical deposition. The default value is one, giving 100% conformal deposition. MACHINE specifies the name of a deposition machine. The parameters for this machine must be defined earlier in the input file with the MACHINE statement. See Section 4.19 “MACHINE” for more information. RATE specifies the deposition rate in units of um/minute. This rate applies to vertical deposition on flat surfaces. The deposition rate on sidewalls is defined as the product of RATE and ISOTROPIC. SIGMA specifies the spread of the distribution function for the incoming particles. The distribution function is assumed to be Gaussian, so SIGMA defines the width of this function. See “SIGMA” on page 55 for details. TIME specifies the deposition time in minutes. This must be specified for all physical mode deposition steps. VOIDSIZE specifies the minimum size of voids that can be created by a deposition step. The default is infinity, which means no voids will be created. Examples To deposit a planarized layer of metal to a height of 0.5 microns above the current top of the structure, type: Deposit Aluminum Thickness=0.5 MAX To fill all trenches or open vias in the structure with oxide, type: Deposit Oxide Thickness=0.0 MAX Use a negative value such as THICKNESS=-0.1 value would imply the trenches to be refilled to within 0.1 microns of the top. To deposit a 0.8 micron layer of a user-defined dielectric called my_TEOS, type: Deposit Conformal Material("my_TEOS") Thickness=0.8 \ Stepcoverage = 0.75 This layer is to be deposited conformally with 0.75 step coverage. Therefore, the sidewall deposition thickness is 0.8*0.75=0.6 microns. Using a physical model to deposit 1.0 microns of Aluminum with a step coverage of 60% (see example below). Deposit Aluminum Rate=0.5 Time=2.0 Isotropic=0.6 Below, the same example is using a MACHINE definition. Machine Name=”my_cvd” Deposit Aluminum Rate=0.5 Isotropic=0.6 Deposit Time=2.0 Machine="my_cvd" Epitaxial-like deposition Deposit Silicon Conformal Thickness=0.1 Boron=1e17 97 Victory Cell User’s Manual DIFFUSE Statements 4.5 DIFFUSE DIFFUSE runs an annealing step on the wafer and calculates diffusion of impurities. Syntax Diffuse Time=

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