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sentaurus 代码

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sentaurus 代码

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;---------------------------------------------------------------------------- ;Setting parameters ; - lateral (define Ltot 1.0) ; [um] Lateral extend total (define Lg 0.2) ; [um] Gate length ; - layers (define Hgate 40e-4) (define Hsd 0.05) (define Hepi 1.5) ;[um] EPI thickness ;---------------------------------------------------------------------------- ;Derived quantities (define Xmax (/ Ltot 2.0)) (define Xg (/ Lg 2.0)) (define Ygate Hgate) (define Ysd (+ Ygate Hsd)) (define Yepi (+ Ygate Hepi)) ;************************************************** ;Overlap resolution:New replaces Old (sdegeo:set-default-boolean "ABA") ;************************************************** ;Creating epi (sdegeo:create-rectangle (position (* Xmax -1.0) Yepi 0.0) (position Xmax Ygate 0.0) "Silicon" "region_1" ) ;Creating oxide layer (sdegeo:create-rectangle (position (* Xg -1.0) Ygate 0.0) (position Xg 0.0 0.0) "SiO2" "region_2" ) ;---------------------------------------------------------------------------------- ;---------------------------------------------------------------------------------- ;Contact declarations (sdegeo:define-conatct-set "source" 4.0 (color:rgb 1.0 0.0 0.0) ”##” (sdegeo:define-conatct-set "drain" 4.0 (color:rgb 0.0 1.0 0.0) ”##” (sdegeo:define-conatct-set "gate" 4.0 (color:rgb 0.0 0.0 1.0) ”##” (sdegeo:define-conatct-set "substrate" 4.0 (color:rgb 0.0 1.0 1.0) ”##” ;---------------------------------------------------------------------------------- ;Contact settings (sdegeo:define-2D-contact (find-edge-id (position (* (+Xmax Xg) -0.5) Ygate 0.0)) "source" ) (sdegeo:define-2d-contact (find-edge-id (position (* (+ Xmax Xg) 0.5) Ygate 0.0)) "drain" (sdegeo:define-2d-contact (find-edge-id (position (0.0 0.0 0.0)) "gate" (sdegeo:define-2d-contact (find-edge-id (position (0.0 Yepi 0.0)) "substrate" ;Separating lumps (sde:assign-materia-and-region-names "all") ;************************************************************* ;Setting region names (sde:add-material (find-body-id (position 0.0 (* 0.5(+Yepi Ygate)) 0.0)) "Silicon " " R.epi" (sde:add-material (find-body-id (position 0.0 (* 0.5Ygate) 0.0)) " SiO2" " R.gate") ;-------------------------------------------------------------------------------------------------- ;-------------------------------------------------------------------------------------------------- ;Profiles ; - EPI (sdedr:define-constant-profile"Const.SiEpi" "BoronActiveConcentration" 5e17) (sdedr:define-constant-profile-region "PlaceCD.SiEpi" "Const.SiEpi" "R.epi") ;Source/Drain base line definitions (sdedr:define-refinement-window "BaseLine.Source" " Line" (position (* Xmax -1.0) 0.0 0.0) (position (* Xg -1.0) 0.0 0.0)) (sdedr:define-refinement-window "BaseLine.Drain" " Line" (position Xg 0.0 0.0) (position Xmax 0.0 0.0) ;Source/Drain implant definition (sdedr:define-gaussion-profile "Impl.SDprof" "PhosphorusActiveConcentration" "PeakPos" Ygate "PeakVal" 5e20 "ValueAtDepth" 1e18 "Depth" Ysd "Gauss" "Factor" 0.4 ) ;Source/Drain implants (sdedr:define-analytical-profile-placement "Impl.Source" "Impl.SDprof" "Baseline.Source" "Positive" "NoReplace" "Eval") (sdedr:define-analytical-profile-placement "Impl.Drain" "Impl.SDprof" "BaseLine.Drain" "Positive” "NoReplace" "Eval") ;-------------------------------------------------------------------------------------- ;Meshing Strategy; ;EPI (sdedr:define-refinement-size "Ref.SiEpi" 0.1 0.1 0.1 0.1) (sdedr:define-refinement-region "RefPlace.SiEpi" "Ref.SiEpi" "R.epi") ;Channel Multibox (sdedr:define-refinement-window "MBWindow.Channel" "Rectangle" (position (* Xg -1.0) Ysd 0.0) (position ( Xg Ygate 0.0) (sdedr:define-multibox-size "MBSize.Channel" 0.05 0.01 0.05 0.01 1.0 1.35) (sdedr:define-multibox-placement "MBPlace.Channel" "MBSize.Channel" "MBWindow.Channel") ;--------------------------------------------------------------------------------------- ;Build mesh ;(system:command "snmesh soifet_msh") (sde:build-mesh "mesh" "-F tdr" "n1_msh")

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