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《2n7002》data sheet

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    文档简介

    N-channel enhancement mode

    vertical D-MOS transistor in a SOT23

    envelope. It is designed for use as a

    Surface Mounted Device (SMD) in

    thin and thick-film circuits, with

    applications in relay, high-speed and

    line transformer drivers.

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    DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors N-channel vertical D-MOS transistor Product specification 2N7002 FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. It is designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits, with applications in relay, high-speed and line transformer drivers. PINNING - SOT23 PIN DESCRIPTION 1 gate 2 source 3 drain QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID RDS(on) drain-source voltage drain current drain-source on-resistance VGS(th) gate-source threshold voltage CONDITIONS DC value ID = 500 mA VGS = 10 V ID = 1 mA VGS = VDS MAX. UNIT 60 V 180 mA 5 Ω 3 V PIN CONFIGURATION ook, halfpage 3 handbook, 2 columns d 1 Top view 2 MSB003 g MBB076 - 1 s Marking code: 702 Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors N-channel vertical D-MOS transistor Product specification 2N7002 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VDS ±VGSO ID IDM Ptot drain-source voltage gate-source voltage drain current drain current total power dissipation Tstg storage temperature range Tj junction temperature open drain DC value peak value Tamb = 25 °C (note 1) (note 2) Notes 1. Mounted on a ceramic substrate measuring 10 × 8 × 0.7 mm. 2. Mounted on a printed circuit board. THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER from junction to ambient CONDITIONS note 1 note 2 Notes 1. Mounted on a ceramic substrate measuring 10 × 8 × 0.7 mm. 2. Mounted on a printed circuit board. MIN. MAX. UNIT − 60 V − 40 V − 180 mA − 800 mA − 300 mW − 250 mW −65 150 °C − 150 °C VALUE 430 500 UNIT K/W K/W April 1995 3 Philips Semiconductors N-channel vertical D-MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER V(BR)DSS drain-source breakdown voltage IDSS drain-source leakage current ±IGSS gate-source leakage current VGS(th) gate-source threshold voltage RDS(on) drain-source on-resistance  Yfs Ciss Coss Crss transfer admittance input capacitance output capacitance feedback capacitance Switching times (see Figs 2 and 3) ton turn-on time toff turn-off time Product specification 2N7002 CONDITIONS ID = 10 µA VGS = 0 VDS = 48 V VGS = 0 VDS = 0 ±VGS = 15 V ID = 1 mA VGS = VDS ID = 500 mA VGS = 10 V ID = 75 mA VGS = 4.5 V ID = 200 mA VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDS = 10 V VGS = 0 f = 1 MHz VDS = 10 V VGS = 0 f = 1 MHz MIN. TYP. MAX. UNIT 60 90 − V − − 1 µA − − 10 nA 0.8 − 3 V − 3.5 5 Ω − − 5.3 Ω 100 200 − mS − 25 40 pF − 22 30 pF − 6 10 pF ID = 200 mA VDD = 50 V VGS = 0 to 10 V ID = 200 mA VDD = 50 V VGS = 0 to 10 V − − 10 ns − − 15 ns April 1995 4 Philips Semiconductors N-channel vertical D-MOS transistor Product specification 2N7002 handbook, halfpage VDD = 50 V 10 V 0V 50 Ω ID MSA631 handbook, halfpage INPUT 10 % 90 % OUTPUT 90 % ton 10 % toff MBB692 Fig.2 Switching time test circuit. Fig.3 Input and output waveforms. handboo3k,0h0alfpage Ptot (mW) 200 100 (2) (1) MLA223 0 0 50 100 150 200 Tamb (°C) (1) On ceramic substrate. (2) On printed circuit board. Fig.4 Power derating curve. April 1995 handbook1, .h6alfpage ID (A) 1.2 MDA697 VGS = 10 V 6V 0.8 5V 0.4 4V 3V 0 0 4 8 12 16 VDS (V) Fig.5 Typical output characteristics; Tj = 25 °C. 5 Philips Semiconductors N-channel vertical D-MOS transistor Product specification 2N7002 handbook1, .h2alfpage ID (A) 0.8 0.4 0 0 4 MDA698 8 VGS (V) 12 handbook,2h0alfpage RDSon (Ω) 16 VGS = 3 V 12 4V 8 5V 4 10 V MDA699 0 1 10 102 103 104 ID (mA) Fig.6 Typical transfer characteristic; VDS = 10 V; Tj = 25 °C. Fig.7 Typical on-resistance as a function of drain current; Tj = 25 °C. 80 handbook, halfpage C (pF) 60 MDA694 40 Ciss 20 Coss Crss 0 0 5 10 15 20 25 VDS (V) Fig.8 Typical capacitances as a function of drain-source voltage; VGS = 0; f = 1 MHz; Tj = 25 °C. April 1995 6 Philips Semiconductors N-channel vertical D-MOS transistor Product specification 2N7002 2.4 handbook, halfpage k 2 1.6 1.2 MDA695 (1) (2) 0.8 0.4 −50 0 50 (1) ID = 500 mA; VGS = 10 V. (2) ID = 75 mA; VGS = 4.5 V. 100 150 Tj (°C) Fig.9 Temperature coefficient of drain-source on-resistance; k = R-----D-R---S-D---(-S-o---n(--o)---n--a-)--t--a-2--t--5--T---°-j--C--typical RDS(on). 1.2 handbook, halfpage k 1.1 1 0.9 0.8 0.7 −50 0 MDA696 50 100 150 Tj (°C) Fig.10 Temperature coefficient of gate-source threshold voltage; k = V-----G-V---S-G---(-S-t-h--(-)-t--h-a-)---t--a-2--t-5---T---°-j--C-- typical VGS(th) at 1 mA. April 1995 7 Philips Semiconductors N-channel vertical D-MOS transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads Product specification 2N7002 SOT23 D B E A X 3 1 e1 bp e 2 wM B HE vM A A A1 Q c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.55 0.15 0.45 0.2 0.1 OUTLINE VERSION IEC SOT23 April 1995 REFERENCES JEDEC EIAJ 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors N-channel vertical D-MOS transistor Product specification 2N7002 DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 9 Philips Semiconductors N-channel vertical D-MOS transistor NOTES Product specification 2N7002 April 1995 10 Philips Semiconductors N-channel vertical D-MOS transistor NOTES Product specification 2N7002 April 1995 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 137107/00/01/pp12 Date of release: April 1995 Document order number: 9397 750 02442

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