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4086 CMOS 2输入端可扩展四与或非门.pdf

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4086 CMOS 2输入端可扩展四与或非门.pdf

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CD4086BMS December 1992 CMOS Expandable 4-Wide 2-Input AND-OR-INVERT Gate Features Pinout • Medium Speed Operation - tPHL = 90ns; tPLH = 140ns (Typ.) at 10V • High Voltage Type (20V Rating) • INHIBIT and ENABLE Inputs • Buffered Outputs • 100% Tested for Quiescent Current at 20V • Maximum Input Current of 1µA at 18V Over Full Pack- age Temperature Range; 100nA at 18V and +25oC • Noise Margin (Over Full Package/Temperature Range) - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V • Standardized Symmetrical Output Characteristics • 5V, 10V and 15V Parametric Ratings • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” Description CD4086BMS contains one 4-wide 2-input AND-OR-INVERT gate with an INHIBIT/EXP input and an ENABLE/EXP input. For a 4-wide A-O-I function INHIBIT/EXP is tied to VSS and ENABLE/EXP to VDD. See Figure 2 and its associated explanation for applications where a capability greater than 4-wide is required. The CD4076B is supplied in these 14 lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4H H1B H4F CD4086BMS TOP VIEW A1 B2 J = INH + ENABLE + AB + CD + EF + GH 3 NC 4 E5 F6 VSS 7 14 VDD 13 D 12 C 11 ENABLE/EXP 10 INHIBIT/EXP 9H 8G NC = NO CONNECTION Functional Diagram 10 INHIBIT/EXP 1 A2 B 12 C 13 D 5 E6 F 8 G9 H 11 ENABLE/EXP 3 J LOGIC 1 ≡ HIGH LOGIC 0 ≡ LOW VDD = 14 VSS = 7 NC = 4 J = INH + ENABLE + AB + CD + EF + GH CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 7-1055 File Number 3328 Specifications CD4086BMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance . . . . . . . . . . . . . . . . θja Ceramic DIP and FRIT Package . . . . . 80oC/W θjc 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A LIMITS PARAMETER SYMBOL CONDITIONS (NOTE 1) SUBGROUPS TEMPERATURE MIN MAX UNITS Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC - 2 µA 2 +125oC - 200 µA VDD = 18V, VIN = VDD or GND 3 -55oC - 2 µA Input Leakage IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA 2 +125oC -1000 - nA VDD = 18V 3 -55oC -100 - nA Input Leakage IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA 2 +125oC - 1000 nA VDD = 18V 3 -55oC - 100 nA Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH > VOL < V VDD = 20V, VIN = VDD or GND 7 +25oC VDD/2 VDD/2 VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC Input Voltage Low VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V (Note 2) Input Voltage High VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V (Note 2) Input Voltage Low VIL VDD = 15V, VOH > 13.5V, 1, 2, 3 +25oC, +125oC, -55oC - 4 V (Note 2) VOL < 1.5V Input Voltage High VIH VDD = 15V, VOH > 13.5V, 1, 2, 3 +25oC, +125oC, -55oC 11 - V (Note 2) VOL < 1.5V NOTES: 1. All voltages referenced to device GND, 100% testing being 3. For accuracy, voltage is measured differentially to VDD. Limit implemented. is 0.050V max. 2. Go/No Go test with limits applied to inputs. 7-1056 Specifications CD4086BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay DATA Propagation Delay DATA Propagation Delay INHIBIT Propagation Delay INHIBIT Transition Time SYMBOL CONDITIONS (NOTES 1, 2) TPHL1 VDD = 5V, VIN = VDD or GND TPLH1 VDD = 5V, VIN = VDD or GND TPHL2 VDD = 5V, VIN = VDD or GND TPLH2 VDD = 5V, VIN = VDD or GND TTHL VDD = 5V, VIN = VDD or GND TTLH GROUP A SUBGROUPS TEMPERATURE 9 +25oC 10, 11 +125oC, -55oC 9 +25oC 10, 11 +125oC, -55oC 9 +25oC 10, 11 +125oC, -55oC 9 +25oC 10, 11 +125oC, -55oC 9 +25oC 10, 11 +125oC, -55oC NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. LIMITS MIN MAX - 450 - 608 - 620 - 837 - 300 - 405 - 500 - 675 - 200 - 270 UNITS ns ns ns ns ns ns ns ns ns ns TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current SYMBOL CONDITIONS IDD VDD = 5V, VIN = VDD or GND VDD = 10V, VIN = VDD or GND VDD = 15V, VIN = VDD or GND Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VDD = 5V, No Load VOL VDD = 10V, No Load VOH VDD = 5V, No Load VOH VDD = 10V, No Load IOL5 VDD = 5V, VOUT = 0.4V Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V NOTES 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 TEMPERATURE -55oC, +25oC +125oC -55oC, +25oC +125oC -55oC, +25oC +125oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC LIMITS MIN MAX - 1 - 30 - 2 - 60 - 2 - 120 - 50 - 50 4.95 - 9.95 - 0.36 - 0.64 - 0.9 - 1.6 - 2.4 - 4.2 - - -0.36 - -0.64 - -1.15 - -2.0 - -0.9 - -2.6 UNITS µA µA µA µA µA µA mV mV V V mA mA mA mA mA mA mA mA mA mA mA mA 7-1057 Specifications CD4086BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL CONDITIONS Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V Input Voltage Low Input Voltage High Propagation Delay DATA Propagation Delay DATA Propagation Delay INHIBIT Propagation Delay INHIBIT Transition Time Input Capacitance VIL VDD = 10V, VOH > 9V, VOL < 1V VIH VDD = 10V, VOH > 9V, VOL < 1V TPHL1 TPLH1 TPHL2 TPLH2 TTHL1 TTLH1 CIN VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V Any Input NOTES 1, 2 1, 2 1, 2 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE MIN +125oC - -55oC - +25oC, +125oC, - -55oC +25oC, +125oC, 7 -55oC +25oC - +25oC - +25oC - +25oC - +25oC - +25oC - +25oC - +25oC - +25oC - +25oC - +25oC - MAX -2.4 -4.2 3 UNITS mA mA V - V 180 ns 120 ns 250 ns 180 ns 120 ns 80 ns 200 ns 140 ns 100 ns 80 ns 7.5 pF NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional Propagation Delay Time SYMBOL CONDITIONS IDD VDD = 20V, VIN = VDD or GND VNTH VDD = 10V, ISS = -10µA ∆VTN VDD = 10V, ISS = -10µA VTP ∆VTP VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA F TPHL TPLH VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND VDD = 5V NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. NOTES 1, 4 1, 4 1, 4 TEMPERATURE MIN +25oC - +25oC -2.8 +25oC - 1, 4 +25oC 0.2 1, 4 +25oC - 1 1, 2, 3, 4 +25oC +25oC VOH > VDD/2 - 3. See Table 2 for +25oC limit. 4. Read and Record MAX 7.5 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V ns TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-1 Output Current (Sink) Output Current (Source) IDD IOL5 IOH5A ± 0.2µA ± 20% x Pre-Test Reading ± 20% x Pre-Test Reading 7-1058 Specifications CD4086BMS TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 PDA (Note 1) 100% 5004 1, 7, 9, Deltas Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 PDA (Note 1) 100% 5004 1, 7, 9, Deltas Final Test 100% 5004 2, 3, 8A, 8B, 10, 11 Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 Group D Sample 5005 1, 2, 3, 8A, 8B, 9 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 CONFORMANCE GROUPS Group E Subgroup 2 TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD TEST PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 READ AND RECORD PRE-IRRAD POST-IRRAD 1, 9 Table 4 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 Note 1 OPEN 3, 4 GROUND 1, 2, 5 - 13 VDD 14 9V ± -0.5V 50kHz 25kHz Static Burn-In 2 3, 4 Note 1 7 1, 2, 5, 6, 8 - 14 Dynamic Burn- 4 In Note 1 7 14 3 1, 2, 5, 6, 8, 9, 12, 10, 11 13 Irradiation 3, 4 Note 2 7 1, 2, 5, 6, 8 - 14 NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V 7-1059 * A1 * B2 p p n n p p CD4086BMS VDD p p p p p * C 12 * D 13 n n n n p p p n VDD * E5 * F6 * G8 * H9 * ENABLE/EXP 11 * INHIBIT/EXP 10 n n p p n n p p p n n n n n n 3J VSS TERM 14 = VDD TERM 7 = VSS VDD VSS VSS * ALL INPUTS PROTECTED BY CMOS PROTECTION NETWORK FIGURE 1. SCHEMATIC DIAGRAM INHIBIT/EXP1 A1 B1 VSS INHIBIT/EXP2 VSS A2 B2 C1 C2 D1 J1 D2 J2 E1 E2 F1 F2 G1 H1 ENABLE/EXP1 VDD G2 H2 ENABLE/EXP2 J2 = A1 B1 + C1 D1 + E1 FE + G1 H1 + A2 B2 + C2 D2 + E2 F2 + G2 H2 FIGURE 2. TWO CD4086BMS’S CONNECTED AS AN 8-WIDE 2-INPUT A-O-I GATE Figure 2 above shows two CD4086’s utilized to obtain 8-wide 2-input A-O-I function. The output (J1) of one CD4086 is fed directly to the ENABLE/EXP2 line of the second CD4086. In a similar fashion, any NAND gate output can be fed directly into the ENABLE/EXP input to obtain a 5-wide A-O-I function. In addition, and AND gate output can be fed directly into the INHIBIT/EXP input with the same result. 7-1060 CD4086BMS Typical Performance Characteristics OUTPUT VOLTAGE (VO) - V AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 15V 15 VDD 6 VDD CURRENT PEAK VI 10V 10 CURRENT PEAK 5V 5 5 10 14 4 VO 3 11 7 ID VSS 2 VDD 1 0 0 5 10 15 INPUT VOLTAGE (VI) - V FIGURE 3. TYPICAL VOLTAGE AND CURRENT TRANSFER CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC OUTPUT LOW (SINK) CURRENT (IOL) (mA) 30 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 25 20 15 10V 10 5 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 5. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 0 0 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 -10 -15 -10V -20 -25 -15V -30 FIGURE 7. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) TRANSITION TIME (tTHL, tTLH) (ns) DRAINCURRENT (ID) - mA OUTPUT VOLTAGE (VO) - V AMBIENT TEMPERATURE (TA) = +25oC 15 MIN MAX VDD VDD 10 VI 10 14 VO 5 11 7 ID VSS VDD 0 5 10 15 INPUT VOLTAGE (VI) - V FIGURE 4. MINIMUM AND MAXIMUM VOLTAGE TRANSFER CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC OUTPUT LOW (SINK) CURRENT (IOL) (mA) 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 10V 7.5 5.0 2.5 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 6. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC 200 SUPPLY VOLTAGE (VDD) = 5V 150 100 10V 15V 50 0 0 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 8. TYPICAL TRANSITION TIME vs LOAD CAPACITANCE 7-1061 CD4086BMS Typical Performance Characteristics (Continued) OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 105 AMBIENT TEMPERATURE (TA) = +25oC POWER DISSIPATION (PD) (µW) 104 SUPPLY VOLTAGE (VDD) = 15V 103 10V 10V 102 5V 101 CL = 50pF CL = 15pF 100 10-1 100 101 102 103 104 FREQUENCY (f) (kHz) FIGURE 9. TYPICAL POWER DISSIPATION vs FREQUENCY 300 AMBIENT TEMPERATURE (TA) = +25oC 250 SUPPLY VOLTAGE (VDD) = 5V 200 150 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V -10V -15V 0 0 -5 -10 -15 FIGURE 10. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC 500 400 SUPPLY VOLTAGE (VDD) = 5V 300 LOW-TO-HIGH LEVEL PROPAGATION DELAY TIME (tPLH) (ns) HIGH-TO-LOW LEVEL PROPAGATION DELAY TIME (tPHL) - ns 100 10V 50 15V 200 10V 100 15V 0 20 40 60 80 100 LOAD CAPACITANCE (CL) - pF FIGURE 11. TYPICAL DATA OR ENABLE HIGH-TO-LOW LEVEL PROPAGATION DELAY TIME vs LOAD CAPACITANCE 0 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 12. TYPICAL DATA OR ENABLE LOW-TO-HIGH LEVEL PROPAGATION DELAY TIME vs LOAD CAPACITANCE AMBIENT TEMPERATURE (TA) = +25oC LOAD CAPACITANCE (CL) = 50pF 1250 1000 750 tPLH 500 tPHL 250 PROPAGATION DELAY TIME (tPHL, tPLH) (ns) 0 2.5 5 7.5 10 12.5 15 17.5 20 SUPPLY VOLTAGE (VDD) (V) FIGURE 13. TYPICAL DATA OR ENABLE PROPAGATION DELAY TIME vs SUPPLY VOLTAGE 7-1062 CD4086BMS Chip Dimensions and Pad Layout Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: Thickness: 11kÅ − 14kÅ, AL. PASSIVATION: 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 1063

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