In this paper we discuss the design of alow-voltage(1.5V),continuous-time,biquadraticCMOS filter based on Dynamic Gate Biasing (DGB).We begin by discussing the filter’s structure and itstuning mechanism. The filter uses transconductance-C cells and implements low-pass, bandpass and high-pass transfer functions. The transconductances aretuned using the gate voltages of MOSFETs operatingin the triode region. We review the principle of DGB,and discuss the design of the charge pump based onthe filter’s performance and tunability requirements.Circuit details of the filter elements and the chargepump are presented along with SPICE simulationresults of the overall filter.
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