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pmeg2010aer

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wax

WAX marking 元件

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PMEG2010AEH PMEG2010AET 1 A very low VF MEGA Schottky barrier rectiers Rev 03 28 March 2007 Product data sheet 1 Product prole 11 General description Planar Maximum Efciency General Application MEGA Schottky barrier rectiers with an integrated guard ring for stress protection encapsulated in small SurfaceMounted Device SMD plastic packages Table 1 Type number Product overview PMEG2010AEH PMEG2010AET 12 Features Package NXP SOD123F SOT23 JEITA Conguration single single n Forward current IF 1 ......

PMEG2010AEH; PMEG2010AET 1 A very low VF MEGA Schottky barrier rectifiers Rev. 03 — 28 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Type number Product overview PMEG2010AEH PMEG2010AET 1.2 Features Package NXP SOD123F SOT23 JEITA - - Configuration single single n Forward current: IF £ 1 A n Reverse voltage: VR £ 20 V n Very low forward voltage n Small SMD plastic packages 1.3 Applications n Low voltage rectification n High efficiency DC-to-DC conversion n Switch mode power supply n Reverse polarity protection n Low power consumption applications 1.4 Quick reference data Quick reference data Table 2. Symbol IF VR VF [1] Pulse test: tp £ 300 m s; d Parameter forward current reverse voltage forward voltage 0.02. Conditions Tsp £ 55 (cid:176) C IF = 1 A [1] Min - - - Typ - - 380 Max 1 20 430 Unit A V mV £ NXP Semiconductors PMEG2010AEH; PMEG2010AET 1 A very low VF MEGA Schottky barrier rectifiers 2. Pinning information Table 3. Pin SOD123F 1 2 SOT23 1 2 3 Pinning Description cathode anode anode not connected cathode Simplified outline Symbol [1] 1 2 1 2 sym001 3 3 1 2 1 2 n.c. 006aaa436 [1] The marking bar indicates the cathode. 3. Ordering information Table 4. Type number Ordering information Package Name - - Description plastic surface-mounted package; 2 leads plastic surface-mounted package; 3 leads Version SOD123F SOT23 PMEG2010AEH PMEG2010AET 4. Marking Marking codes Table 5. Type number PMEG2010AEH PMEG2010AET [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking code[1] AF *AX PMEG2010AEH_PMEG2010AET_3 Product data sheet Rev. 03 — 28 March 2007 © NXP B.V. 2007. All rights reserved. 2 of 11 NXP Semiconductors 5. Limiting values PMEG2010AEH; PMEG2010AET 1 A very low VF MEGA Schottky barrier rectifiers Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min - VR - IF IFRM Parameter reverse voltage forward current repetitive peak forward current Conditions Tsp £ 55 (cid:176) C tp £ 1 ms; 0.25 square wave; tp = 8 ms Tamb £ 25 (cid:176) C PMEG2010AEH PMEG2010AET non-repetitive peak forward current total power dissipation PMEG2010AEH PMEG2010AET junction temperature ambient temperature storage temperature IFSM Ptot Tj Tamb Tstg - - - - - - - - - 65 - 65 [1] [2] [1] [2] Max 20 1 7 6 9 375 830 280 420 150 +150 +150 Unit V A A A A mW mW mW mW (cid:176) C (cid:176) C (cid:176) C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient PMEG2010AEH Conditions in free air PMEG2010AET Rth(j-sp) thermal resistance from junction to solder point PMEG2010AEH PMEG2010AET Min Typ Max Unit [1] [2] [3] [2] [3] [4] - - - - - - - - - - - - 330 150 440 300 K/W K/W K/W K/W 60 120 K/W K/W [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Soldering point of cathode tab. PMEG2010AEH_PMEG2010AET_3 Product data sheet Rev. 03 — 28 March 2007 © NXP B.V. 2007. All rights reserved. 3 of 11 d £ NXP Semiconductors 7. Characteristics PMEG2010AEH; PMEG2010AET 1 A very low VF MEGA Schottky barrier rectifiers Characteristics Table 8. Tamb=25(cid:176) C unless otherwise specified. Symbol VF Parameter forward voltage Conditions IF = 10 mA IF = 100 mA IF = 1 A VR = 5 V VR = 10 V VR = 20 V VR = 5 V; f = 1 MHz IR reverse current diode capacitance Cd [1] Pulse test: tp £ 300 m s; d 0.02. Min Typ Max Unit [1] - - - - - - - 200 265 380 15 20 50 55 220 290 430 50 80 200 70 mV mV mV m A m A m A pF PMEG2010AEH_PMEG2010AET_3 Product data sheet Rev. 03 — 28 March 2007 © NXP B.V. 2007. All rights reserved. 4 of 11 £ NXP Semiconductors PMEG2010AEH; PMEG2010AET 1 A very low VF MEGA Schottky barrier rectifiers 104 IF (mA) 103 102 10 1 10- 1 0 mdb823 (1) (2) (3) (4) 0.1 0.2 0.3 0.4 0.5 VF (V) IR (m A) 105 104 103 102 10 1 10- 1 10- 2 10- 3 006aab033 (1) (2) (3) (4) 0 5 10 15 20 VR (V) (1) Tamb = 125 (cid:176) C (2) Tamb = 85 (cid:176) C (3) Tamb = 25 (cid:176) C (4) Tamb = - 40 (cid:176) C (1) Tamb = 125 (cid:176) C (2) Tamb = 85 (cid:176) C (3) Tamb = 25 (cid:176) C (4) Tamb = - 40 (cid:176) C Fig 1. Forward current as a function of forward Fig 2. Reverse current as a function of reverse voltage; typical values voltage; typical values mdb824 200 Cd (pF) 150 100 50 0 0 5 10 15 20 VR (V) f = 1 MHz; Tamb = 25 (cid:176) C Fig 3. Diode capacitance as a function of reverse voltage; typical values PMEG2010AEH_PMEG2010AET_3 Product data sheet Rev. 03 — 28 March 2007 © NXP B.V. 2007. All rights reserved. 5 of 11
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