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W82M32V SRAM芯片手册

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white公司的SRAM芯片W82M32V

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W82M32V-XBX 2Mx32 SRAM 3.3V MULTI-CHIP PACKAGE FEATURES  Access Times of 12, 15, 17, 20ns  Packaging • 255 PBGA, 25mm x 25mm, 625mm2  Organized as 2Mx32  Commercial, Industrial and Military Temperature Ranges  Low Voltage Operation: • 3.3V ± 10% Power Supply  Low Power CMOS  TTL Compatible Inputs and Outputs  Fully Static Operation: • No clock or refresh required.  Three State Output. * This product is subject to change without notice. PIN CONFIGURATION FOR W82M32V-XBX TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC B NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC C NC NC NC A2 A1 A0 GND GND VCC VCC A18 A17 A16 GND NC NC D NC NC CS#2 A3 A4 D14 D15 NC CS#4 D24 D25 OE# A15 NC NC NC E NC NC D9 D8 A19 D12 D13 GND VCC D26 D27 WE#4 D31 D30 NC NC F NC NC D10 D11 GND GND GND GND VCC VCC VCC VCC D28 D29 NC NC G NC NC WE#2 GND GND GND GND GND VCC VCC VCC VCC VCC NC NC NC H NC NC GND GND GND GND GND GND VCC VCC VCC VCC VCC VCC NC NC J NC NC VCC VCC VCC VCC VCC VCC GND GND GND GND GND GND NC NC K NC NC CS#1 VCC VCC VCC VCC VCC GND GND GND GND GND NC NC NC L NC NC D1 D0 VCC VCC VCC VCC GND GND GND GND D23 D22 NC NC M NC NC D2 D3 A20 D7 D5 VCC GND D17 D16 CS#3 D20 D21 NC NC N NC NC WE#1 A6 A5 D6 D4 NC WE#3 D19 D18 A14 A13 NC NC NC P NC NC GND A7 A8 A9 VCC VCC GND GND A10 A11 A12 VCC NC NC R NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC T NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC I/O0-31 A0-20 WE#1-4 CS#1-4 OE# VCC GND NC PIN DESCRIPTION Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected BLOCK DIAGRAM OE# A0-20 WE#1 CS#1 2M x 8 WE#2 CS#2 2M x 8 WE#3 CS#3 2M x 8 WE#4 CS#4 2M x 8 8 I/O 0-7 8 I/O 8-15 8 I/O 16-23 8 I/O 24-31 Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 © 2011 Microsemi Corporation. All rights reserved. 1 Rev. 8 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com W82M32V-XBX ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Unit Operating Temperature TA -55 +125 °C Storage Temperature TSTG -65 +150 °C Signal Voltage Relative to GND VG -0.5 4.6 V Junction Temperature TJ 150 °C Supply Voltage VCC -0.5 4.6 V RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VIH VIL Min Max Unit 3.0 3.6 V 2.2 VCC + 0.3 V -0.3 +0.8 V CS# OE# WE# HXX L LH LXL LHH TRUTH TABLE Mode Standby Read Write Out Disable Data I/O High Z Data Out Data In High Z Power Standby Active Active Active CAPACITANCE (TA = +25°C) Parameter Symbol Conditions OE# capacitance COE VIN = 0 V, f = 1.0 MHZ WE#1-4 capacitance CWE VIN = 0 V, f = 1.0 MHZ CS#1-4 capacitance CCS VIN = 0 V, f = 1.0 MHZ Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHZ Address input capacitance CAD VIN = 0 V, f = 1.0 MHZ This parameter is guaranteed by design but not tested. Max Unit 30 pF 10 pF 10 pF 10 pF 30 pF Parameter Input Leakage Current Output Leakage Current Operating Supply Current (x 32 Mode) Standby Current Output Low Voltage Output High Voltage NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V. NOTE: Contact factory for low power option. Sym ILI ILO ICC x 32 ISB VOL VOH DC CHARACTERISTICS (VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ 125°C) Conditions VIN = GND to VCC CS# = VIH, OE# = VIH, VOUT = GND to VCC CS# = VIL, OE# = VIH, f = 5MHZ, VCC = 3.6V CS# = VIH, OE# = VIH, f = 5MHZ, VCC = 3.6V IOL = 8mA IOH = -4.0mA Min Max Units 10 μA 10 μA 1100 mA 200 mA 0.4 V 2.4 V Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 © 2011 Microsemi Corporation. All rights reserved. 2 Rev. 8 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com W82M32V-XBX Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z 1. This parameter is guaranteed by design but not tested Symbol tRC tAA tOH tACS tOE tCLZ1 tOLZ1 tCHZ1 tOHZ1 AC CHARACTERISTICS (VCC = 3.3V, -55°C ≤ TA ≤ +125°C) -12 -15 Min Max Min Max 12 15 12 15 3 3 12 15 7 8 3 3 1 1 7 8 7 8 -17 Min Max 17 17 3 17 8 3 1 8 8 -20 Min Max 20 20 3 20 10 3 1 10 10 Units ns ns ns ns ns ns ns ns ns. Parameter Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold Time 1. This parameter is guaranteed by design but not tested Symbol tWC tCW tAW tDW tWP tAS tAH tOW1 tWHZ1 tDH AC CHARACTERISTICS (VCC = 3.3V, -55°C ≤ TA ≤ +125°C) -12 Min Max 12 10 10 8 10 0 0 2 7 0 -15 Min Max 15 12 12 9 12 0 0 2 8 0 -17 Min Max 17 12 12 9 14 0 0 3 8 0 -20 Min Max 20 14 14 10 14 0 0 3 9 0 Units ns ns ns ns ns ns ns ns ns ns AC TEST CIRCUIT IOL Current Source D.U.T. CEFF = 50pf VZ 1.5V (Bipolar Supply) IOH Current Source AC TEST CONDITIONS Parameter Typ Unit Input Pulse Levels VIL = 0, VIH = 2.5 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V NOTES: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 W. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 © 2011 Microsemi Corporation. All rights reserved. 3 Rev. 8 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com ADDRESS DATA I/O W82M32V-XBX TIMING WAVEFORM – READ CYCLE tRC tAA tOH PREVIOUS DATA VALID DATA VALID READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH) ADDRESS CS# OE# DATA I/O tRC tAA tACS tCLZ tOE tOLZ HIGH IMPEDANCE tCHZ tOHZ DATA VALID READ CYCLE 2 (WE# = VIH) WRITE CYCLE – WE# CONTROLLED ADDRESS CS# WE# DATA I/O tWC tAW tCW tAH tAS tWP tWHZ tOW tDW tDH DATA VALID WRITE CYCLE 1, WE# CONTROLLED WRITE CYCLE – CS# CONTROLLED ADDRESS CS# WE# DATA I/O tWC tAW tAS tCW tAH tWP tDW tDH DATA VALID WRITE CYCLE 1, WE# CONTROLLED Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 © 2011 Microsemi Corporation. All rights reserved. 4 Rev. 8 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com 25.1 (0.988) MAX 19.05 (0.750) NOM PACKAGE 781 – 255 BALL GRID ARRAY W82M32V-XBX BOTTOM VIEW 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 1.27 (0.050) NOM 1.27 (0.050) NOM 255x Ø0.762(0.030) NOM A B C D E F G H J K L M N P R T 0.69 (0.027) NOM 19.05 (0.750) NOM 2.22 (0.087) MAX 25.1 (0.955) MAX ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 © 2011 Microsemi Corporation. All rights reserved. 5 Rev. 8 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com ORDERING INFORMATION W82M32V-XBX MICROSEMI CORPORATION SRAM ORGANIZATION, 2Mx32 User configurable as 4Mx16 or 8Mx8 Low Voltage Supply 3.3V ± 10% ACCESS TIME (ns) PACKAGE TYPE: B = 25mm x 25mm, 255 PBGA DEVICE GRADE: M = Military I = Industrial C = Commercial -55°C to +125°C -40°C to +85°C 0°C to +70°C W 8 2M 32 V - XX X X Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 © 2011 Microsemi Corporation. All rights reserved. 6 Rev. 8 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com Document Title 2M x 32 Asynchronous SRAM Revision History Rev # History Rev 0 Initial Release Rev 1 Changes 1.1 Add AC/DC Electricals & Timing Diagrams (Pg. 1-7) 1.2 Change Pinout to full 255 (16x16) array 1.3 Change Package Dimension to full 255 (16x16) array Rev 2 Changes (Pg.1,5,6,7) 2.1 Change package dimension from 27mm square to 25mm square 2.2 Change package height from 2.20mm to 2.70mm Max Rev 3 Rev 4 Rev 5 Rev 6 Rev 7 Rev 8 Changes (Pg.1,5,7) 3.1 Change package mechanical drawing to new format. Changes (Pg.1,7) 4.1 Change status to preliminary. Changes (Pg. 1, 7) 5.1 Change status to Final Change (Pg. 5) 6.1 Change max height dimension to 2.21mm/0.087in Change (Pg. 5) 7.1 Change standby current (ISB) from 400 to 200mA Changes (Pg. 1-7) 8.1 Change document layout from White Electronic Designs to Microsemi W82M32V-XBX Release Date Status July 2002 Advanced October 2002 Advanced May 2002 Advanced November 2003 Advanced May 2004 Preliminary April 2006 Final October 2008 Final May 2009 Final April 2011 Final Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 © 2011 Microsemi Corporation. All rights reserved. 7 Rev. 8 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com

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