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    Data Sheet, Rev. 1.1, December 2004 BTS 7960 High Current PN Half Bridge N o v a l i t h I C TM 43 A, 7 mΩ + 9 mΩ Automotive Power Never stop thinking. High Current PN Half Bridge BTS 7960 Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Basic Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 2.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 4 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4.1 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4.2 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.2.1 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2.2 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2.3 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 4.3.1 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3.2 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3.3 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3.4 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3.5 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3.6 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . 16 4.4 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 4.4.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.4.2 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.4.3 Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.4.4 Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . 17 4.4.5 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.4.6 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . 20 5 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 6 Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 6.1 Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 6.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 7 Package Outlines P-TO-263-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 8 Package Outlines P-TO-220-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 Data Sheet 1 Rev. 1.1, 2004-12-07 High Current PN Half Bridge NovalithICTM BTS 7960B BTS 7960P Product Summary The BTS 7960 is a fully integrated high current half bridge for motor drive applications. It is part of the NovalithICTM family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTS 7960 provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption. BTS 7960B P-TO-263-7 BTS 7960P P-TO-220-7 Basic Features • Path resistance of typ. 16 mΩ @ 25 °C • Low quiescent current of typ. 7 µA @ 25 °C • PWM capability of up to 25 kHz combined with active freewheeling • Switched mode current limitation for reduced power dissipation in overcurrent • Current limitation level of 43 A typ. • Status flag diagnosis with current sense capability • Overtemperature shut down with latch behaviour • Overvoltage lock out • Undervoltage shut down • Driver circuit with logic level inputs • Adjustable slew rates for optimized EMI Type BTS 7960B BTS 7960P Data Sheet Ordering Code Q67060-S6160 on request 2 Package P-TO-263-7 P-TO-220-7 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Overview 1 Overview The BTS 7960 is part of the NovalithIC family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadframe, using the chip on chip and chip by chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTS 7960 can be combined with other BTS 7960 to form H-bridge and 3-phase drive configurations. 1.1 Block Diagram BTS 7960 HS base-chip VS Top-chip Gate Driver IN Dead Time Gen. Slew Rate Adj. INH UV Shut Down OV Lock Out SR OT Shut Down Current Lim. Diagnosis IS Current Sense Figure 1 Block Diagram OUT LS base-chip GND Data Sheet 3 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Overview 1.2 Terms Following figure shows the terms used in this data sheet. VVS ,VS IIN IN V IN IINH INH VIN H ISR SR V SR IIS IS VIS IVS , -ID(HS) VS V D S(H S) BTS 7960 O UT IOUT , I L VSD (L S) V OU T G ND IGN D , ID(LS) Figure 2 Terms Data Sheet 4 Rev. 1.1, 2004-12-07 2 Pin Configuration 2.1 Pin Assignment BTS 7960B P-TO-263-7 8 High Current PN Half Bridge BTS 7960 Pin Configuration BTS 7960P P-TO-220-7 8 12 34 56 7 Figure 3 2 46 13 57 Pin Assignment BTS 7960B and BTS 7960P (top view) 2.2 Pin Definitions and Functions Pin Symbol I/O Function 1 GND - Ground 2 IN I Input Defines whether high- or lowside switch is activated 3 INH I Inhibit When set to low device goes in sleep mode 4,8 OUT O Power output of the bridge 5 SR I Slew Rate The slew rate of the power switches can be adjusted by connecting a resistor between SR and GND 6 IS O Current Sense and Diagnosis 7 VS - Supply Bold type: pin needs power wiring Data Sheet 5 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Maximum Ratings 3 Maximum Ratings -40 °C < Tj < 150 °C (unless otherwise specified) Pos Parameter Symbol Limits Unit Test Condition min max Electrical Maximum Ratings 3.0.1 Supply voltage VVS -0.3 45 V 3.0.2 Logic Input Voltage 3.0.3 3.0.4 3.0.5 HS/LS continuous drain current HS pulsed drain current LS pulsed drain current VIN VINH ID(HS) ID(LS) ID(HS) ID(LS) -0.3 5.3 V -40 401) A -60 601) A -60 601) A 3.0.6 Voltage at SR pin VSR -0.3 1.0 V 3.0.7 Voltage between VS and VVS -VIS -0.3 45 V IS pin TC < 85°C switch active TC < 85°C tpulse = 10ms 3.0.8 Voltage at IS pin VIS Thermal Maximum Ratings -20 45 V 3.0.9 Junction temperature Tj 3.0.10 Storage temperature Tstg -40 150 °C -55 150 °C ESD Susceptibility 3.0.11 ESD susceptibility HBM VESD IN, INH, SR, IS OUT, GND, VS kV according to EIA/ JESD 22-A 114B -2 2 -6 6 1) Maximum reachable current may be smaller depending on current limitation level Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the device. Exposure to maximum rating conditions for extended periods of time may affect device reliability Data Sheet 6 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Block Description and Characteristics 4 Block Description and Characteristics 4.1 Supply Characteristics – 40 °C < Tj < 150 °C, 8 V < VS < 18 V, IL = 0A (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. General 4.1.1 Operating Voltage VS 5.5 – 27.5 V 4.1.2 Supply Current IVS(on) – 2 3 mA VINH = 5 V VIN = 0 V or 5 V RSR=0 Ω DC-mode normal operation (no fault condition) 4.1.3 Quiescent Current IVS(off) – 7 15 µA VINH = 0 V VIN = 0 V or 5 V Tj <85 °C – – 65 µA VINH = 0 V VIN = 0 V or 5 V Data Sheet 7 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Block Description and Characteristics 4.2 Power Stages The power stages of the BTS 7960 consist of a p-channel vertical DMOS transistor for the high side switch and a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in a separate top chip. Both switches can be operated up to 25 kHz, allowing active freewheeling and thus minimizing power dissipation in the forward operation of the integrated diodes. The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj . The typical on state resistance characteristics are shown in Figure 4. High Side Switch 25 mΩ 20 RON(HS) 15 Low Side Switch 25 mΩ 20 RON(LS) 15 Tj = 150°C 10 5 4 Figure 4 Tj = 150°C Tj = 25°C Tj = -40°C 8 12 16 20 24 V 28 VS 10 5 4 Tj = 25°C T j = -40°C 8 12 16 20 24 V 28 VS Typical On State Resistance vs. Supply Voltage Data Sheet 8 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Block Description and Characteristics 4.2.1 Power Stages - Static Characteristics – 40 °C < Tj < 150 °C, 8 V < VS < 18 V (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. High Side Switch - Static Characteristics 4.2.1 On state high side resistance RON(HS) – – 4.2.2 Leakage current high IL(LKHS) – side – 4.2.3 Reverse diode VDS(HS) forward-voltage high – side 1) – – Low Side Switch - Static Characteristics mΩ IOUT = 9 A VS= 13.5 V 79 Tj = 25 °C 10 12.5 Tj = 150 °C – 1 µA VINH = 0 V VOUT = 0 V Tj < 85 °C – 50 µA VINH = 0 V VOUT = 0 V Tj = 150 °C V 0.9 1.5 0.8 1.1 0.6 0.8 IOUT = -9 A Tj = -40 °C Tj = 25 °C Tj = 150 °C 4.2.4 On state low side resistance RON(LS) mΩ IOUT = -9 A VS= 13.5V – 9 12 Tj = 25 °C – 14 18 Tj = 150 °C 4.2.5 Leakage current low IL(LKLS) – – 1 µA VINH = 0 V side VOUT = VS Tj < 85 °C – – 15 µA VINH = 0 V VOUT = VS Tj = 150 °C 4.2.6 Reverse diode VSD(LS) V forward-voltage low – 0.9 1.5 side 1) – 0.8 1.1 – 0.6 0.8 IOUT = 9 A Tj = -40 °C Tj = 25 °C Tj = 150 °C 1) Due to active freewheeling, diode is conducting only for a few µs, depending on RSR Data Sheet 9 Rev. 1.1, 2004-12-07 4.2.2 Switching Times High Current PN Half Bridge BTS 7960 Block Description and Characteristics IN VOUT 90% tdr(HS) tr(HS) ∆VOUT t tdf (HS) tf (HS) 90% ∆VOUT 10% 10% t Figure 5 Definition of switching times high side (Rload to GND) IN VOUT 90% t df (LS) tf (LS) ∆VOUT t t dr(LS) tr(LS) 90% ∆VOUT 10% 10% t Figure 6 Definition of switching times low side (Rload to VS) Due to the timing differences for the rising and the falling edge there will be a slight difference between the length of the input pulse and the length of the output pulse. It can be calculated using the following formulas: • ∆tHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS)) • ∆tLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)). Data Sheet 10 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Block Description and Characteristics 4.2.3 Power Stages - Dynamic Characteristics -40 °C < Tj < 150 °C, VS = 13.5 V, Rload = 2Ω (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. HIgh Side Switch Dynamic Characteristics 4.2.7 Rise-time of HS tr(HS) 0.5 – 2.8 4.2.8 Slew rate HS on ∆VOUT/ tr( HS) – – – 4.2.9 Switch on delay time tdr(HS) HS 1.7 – 5.6 4.2.10 Fall-time of HS tf(HS) 0.5 – 2.8 4.2.11 Slew rate HS off -∆VOUT/ tf(HS) – – – 4.2.12 Switch off delay time tdf(HS) HS 1.2 – 4 µs 1 1.5 2– 7 11 RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ V/µs 11 – 6– 1.6 – RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ µs 3.1 4.5 4.4 – 14 22.4 RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ µs 1 1.5 2– 7 11 RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ V/µs 11 – 6– 1.6 – RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ µs 2.4 3.6 3.4 – 10 16 RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ Data Sheet 11 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Block Description and Characteristics -40 °C < Tj < 150 °C, VS = 13.5 V, Rload = 2Ω (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. Low Side Switch Dynamic Characteristics 4.2.13 Rise-time of LS tr(LS) 0.5 – 2.8 4.2.14 Slew rate LS switch off ∆VOUT/ tr(LS) – – – 4.2.15 Switch off delay time tdr(LS) LS 0.7 – 2.8 4.2.16 Fall-time of LS tf(LS) 0.5 – 2.8 4.2.17 Slew rate LS switch on -∆VOUT/ tf(LS) – – – 4.2.18 Switch on delay time tdf(LS) LS 2.2 – 6.4 µs 1 1.5 2– 7 11 RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ V/µs 11 – 6– 1.6 – RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ µs 1.3 1.9 2.2 – 7 11.2 RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ µs 1 1.5 2– 7 11 RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ V/µs 11 – 6– 1.6 – RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ µs 4 5.8 5.6 – 16 25.4 RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ Data Sheet 12 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Block Description and Characteristics 4.3 Protection Functions The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation (Chapter 4.3.4). In a fault condition the BTS 7960 will apply the highest slew rate possible independent of the connected slew rate resistor. Overvoltage, overtemperature and overcurrent are indicated by a fault current IIS(LIM) at the IS pin as described in the paragraph “Status Flag Diagnosis With Current Sense Capability” on Page 17 and Figure 10. In the following the protection functions are listed in order of their priority. Overvoltage lock out overrides all other error modes. 4.3.1 Overvoltage Lock Out To assure a high immunity against overvoltages (e.g. load dump conditions) the device shuts the lowside MOSFET off and turns the highside MOSFET on, if the supply voltage is exceeding the over voltage protection level VOV(OFF). The IC operates in normal mode again with a hysteresis VOV(HY) if the supply voltage decreases below the switch-on voltage VOV(ON). In H-bridge configuration, this behavior of the BTS 7960 will lead to freewheeling in highside during over voltage. 4.3.2 Undervoltage Shut Down To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (output is tri-state), if the supply voltage drops below the switch-off voltage VUV(OFF). The IC becomes active again with a hysteresis VUV(HY) if the supply voltage rises above the switch-on voltage VUV(ON). 4.3.3 Overtemperature Protection The BTS 7960 is protected against overtemperature by an integrated temperature sensor. Overtemperature leads to a shut down of both output stages. This state is latched until the device is reset by a low signal with a minimum length of treset at the INH pin, provided that its temperature has decreased at least the thermal hysteresis ∆T in the meantime. Repetitive use of the overtemperature protection might reduce lifetime. 4.3.4 Current Limitation The current in the bridge is measured in both switches. As soon as the current in forward direction in one switch (high side or low side) is reaching the limit ICLx, this switch is deactivated and the other switch is activated for tCLS . During that time all changes at the Data Sheet 13 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Block Description and Characteristics IN pin are ignored. However, the INH pin can still be used to switch both MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the IS pin is reset after 2 * tCLS. Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the effective current limitation level ICLx depends on the slew rate of the load current dI/dt as shown in Figure 8 IL ICLx IC Lx 0 tC LS t Figure 7 Timing Diagram Current Limitation High Side Switch Low SideSwitch I C L H [A] IC LL [A] 80 75 70 65 60 55 50 45 40 35 0 Tj = -40°C T j = 25°C Tj = 150°C I CLH0 50 0 1000 1500 2000 dIL/dt [A/ms] 80 75 70 65 60 55 50 45 40 35 0 ICLL0 50 0 Tj = -40°C Tj = 25°C Tj = 150°C 10 0 0 150 0 2000 dIL/dt [A/ms] Figure 8 Current Limitation Level vs. Current Slew Rate dI/dt Data Sheet 14 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Block Description and Characteristics High Side Switch 65 A 60 ICLH 55 Tj = -40°C Tj = 25°C Tj = 150°C 50 45 40 Low Side Switch 65 A 60 ICLL 55 50 45 40 Tj = -40°C Tj = 25°C Tj = 150°C 35 4 6 8 10 12 14 16 18 V 20 VS 35 4 6 8 10 12 14 16 18 V 20 VS Figure 9 Typical Current Limitation Detection Levels vs. Supply Voltage In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation. That way of limiting the current has the advantage that the power dissipation in the BTS 7960 is much smaller than by driving the MOSFETs in linear mode. Therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device. 4.3.5 Short Circuit Protection The device is short circuit protected against • output short circuit to ground • output short circuit to supply voltage • short circuit of load The short circuit protection is realized by the previously described current limitation in combination with the over-temperature shut down of the device Data Sheet 15 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Block Description and Characteristics 4.3.6 Electrical Characteristics - Protection Functions – 40 °C < Tj < 150 °C; 8 V < VS < 18 V (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. Under Voltage Shut Down 4.3.1 Switch-ON voltage VUV(ON) – – 5.5 V 4.3.2 Switch-OFF voltage VUV(OFF) 4.0 – 5.4 V 4.3.3 ON/OFF hysteresis VUV(HY) – 0.2 – V Over Voltage Lock Out VS increasing VS decreasing – 4.3.4 Switch-ON voltage 4.3.5 Switch-OFF voltage 4.3.6 ON/OFF hysteresis Current Limitation VOV(ON) 27.5 – VOV(OFF) 27.6 – VOV(HY) – 0.2 –V 30 V –V VS decreasing VS increasing – 4.3.7 Current limitation detection level high side ICLH0 4.3.8 Current limitation detection level low side ICLL0 Current Limitation Timing A 47 62 84 44 60 80 43 59 79 A 36 47 64 34 43 61 33 42 61 VS=13.5 V Tj = -40 °C Tj = 25 °C Tj = 150 °C VS=13.5V Tj = -40 °C Tj = 25 °C Tj = 150 °C 4.3.9 Shut off time for HS tCLS and LS 70 115 210 µs VS=13.5V Thermal Shut Down 4.3.10 Thermal shut down TjSD junction temperature 152 175 200 °C – 4.3.11 Thermal switch on TjSO junction temperature 150 – 190 °C – 4.3.12 Thermal hysteresis ∆T – 7 –K – 4.3.13 Reset pulse at INH pin treset (INH low) 3 – – µs – Data Sheet 16 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Block Description and Characteristics 4.4 Control and Diagnostics 4.4.1 Input Circuit The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In this condition one of the two power switches is switched on depending on the status of the IN pin. To deactivate both switches, the INH pin has to be set to low. No external driver is needed. The BTS 7960 can be interfaced directly to a microcontroller. 4.4.2 Dead Time Generation In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, generating a so called dead time between switching off one MOSFET and switching on the other. The dead time generated in the driver IC is automatically adjusted to the selected slew rate. 4.4.3 Adjustable Slew Rate In order to optimize electromagnetic emission, the switching speed of the MOSFETs is adjustable by an external resistor. The slew rate pin SR allows the user to optimize the balance between emission and power dissipation within his own application by connecting an external resistor RSR to GND. 4.4.4 Status Flag Diagnosis With Current Sense Capability The status pin IS is used as a combined current sense and error flag output. In normal operation (current sense mode), a current source is connected to the status pin, which delivers a current proportional to the forward load current flowing through the active high side switch. If the high side switch is inactive or the current is flowing in the reverse direction no current will be driven except for a marginal leakage current IIS(LK). The external resistor RIS determines the voltage per output current. E.g. with the nominal value of 8500 for the current sense ratio kILIS = IL / IIS, a resistor value of RIS = 1kΩ leads to VIS = (IL / 8.5 A)V. In case of a fault condition the status output is connected to a current source which is independent of the load current and provides IIS(lim). The maximum voltage at the IS pin is determined by the choice of the external resistor and the supply voltage. In case of current limitation the IIS(lim) is activated for 2 * tCLS. Data Sheet 17 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Block Description and Characteristics Normal operation: current sense mode VS IIS~ ILoad IIS(lim) ESD-ZD IS Sense output logic RIS VIS Fault condition: error flag mode VS ESD-ZD IS IIS(lim) Sense output logic RIS VIS Figure 10 Sense current and fault current Data Sheet 18 Rev. 1.1, 2004-12-07 4.4.5 Truth Table High Current PN Half Bridge BTS 7960 Block Description and Characteristics Device State Normal operation Over-voltage (OV) Inputs INH IN 0 X 1 0 1 1 X X Under-voltage (UV) X X Overtemperature or 0 X short circuit of HSS or LSS 1 X Current limitation mode 1 1 1 0 Outputs HSS LSS IS OFF OFF 0 OFF ON 0 ON OFF CS ON OFF 1 OFF OFF 0 OFF OFF 0 OFF OFF 1 OFF ON 1 ON OFF 1 Mode Stand-by mode LSS active HSS active Shut-down of LSS, HSS activated, error detected UV lockout Stand-by mode, reset of latch Shut-down with latch, error detected Switched mode, error detected Switched mode, error detected Inputs: 0 = Logic LOW 1 = Logic HIGH X = 0 or 1 Switches OFF = switched off ON = switched on Status Flag IS: CS = Current sense mode 1 = Logic HIGH (error) Data Sheet 19 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Block Description and Characteristics 4.4.6 Electrical Characteristics - Control and Diagnostics – 40 °C < Tj < 150 °C, 8 V < VS < 18 V (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. Control Inputs (IN and INH) 4.4.1 4.4.2 4.4.3 4.4.4 High level voltage INH, IN Low level voltage INH, IN Input voltage hysteresis Input current 4.4.5 Input current Current Sense VINH(H) VIN(H) VINH(L) VIN(L) VINHHY VINHY IINH(H) IIN(H) IINH(L) IIN(L) 4.4.6 Current sense ratio kILIS in static on-condition kILIS = IL / IIS 4.4.7 Maximum analog sense current, sense current in fault condition IIS(lim) – 1.75 2.15 V 1.6 2 1.1 1.4 – V – 350 – mV – 200 – – 30 150 µA – 25 125 µA 103 6 8.5 11 5 8.5 12 3 8.5 14 4 4.5 7 mA – – – VIN = VINH= 5.3 V VIN = VINH=0.4 V RIS = 1 kΩ IL = 30 A IL = 15 A IL = 5 A VS = 13.5 V RIS = 1kΩ 4.4.8 Isense leakage current IISL – – 1 µA VIN= 0 V or VINH= 0 V 4.4.9 Isense leakage current, IISH – 1 200 µA VIN = VINH= 5 V active high side switch IL= 0 A Data Sheet 20 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Thermal Characteristics 5 Thermal Characteristics Pos Parameter Symbol Limits Unit Test Condition min max 5.0.1 Thermal Resistance Rthjc(LS) – Junction-Case, Low Side Switch Rthjc(LS) = ∆Tj(LS)/ Pv(LS) 5.0.2 Thermal Resistance Rthjc(HS) – Junction-Case, High Side Switch Rthjc(HS) = ∆Tj(HS)/ Pv(HS) 5.0.3 Thermal Resistance Rthjc – Junction-Case, both Switches Rthjc= max[∆Tj(HS), ∆Tj(LS)] / (Pv(HS) + Pv(LS)) 5.0.4 Thermal Resistance Junction-Ambient Rthja – 1.8 K/W 0.9 K/W 1.0 K/W 35 K/W 6cm2 cooling area Data Sheet 21 Rev. 1.1, 2004-12-07 6 Application High Current PN Half Bridge BTS 7960 Application 6.1 Application Example Microcontroller µC I/O Reset Vdd I/O I/O I/O I/O Vss Voltage Regulator WO TLE I RO 4278G Q D GND Reverse Polarity Protection VS SPD 50P03L BTS 7960B BTS 7960B VS INH VS INH IN M IN IS OUT OUT IS SR GND SR GND High Current H-Bridge Figure 11 Application Example: H-Bridge with two BTS 7960B 6.2 Layout Considerations Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The BTS 7960 has no separate pin for power ground and logic ground. Therefore it is recommended to assure that the offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of the device (GND / pin 1) is minimized. If the BTS 7960 is used in a H-bridge or B6 bridge design, the voltage offset between the GND pins of the different devices should be small as well. A ceramic capacitor from VS to GND close to each device is recommended to provide current for the switching phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable value for this capacitor would be about 470 nF. The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series resistors in the range of 10 kΩ. Data Sheet 22 Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Package Outlines P-TO-263-7 7 Package Outlines P-TO-263-7 P-TO-263-7 (Plastic Transistor Single Outline Package) 9.9 A 7.5 6.6 4.4 1.3 +0.1 -0. 02 B 0.05 (14.9) 10.2 ±0.15 9.2 ±0.2 1±0.3 6.5 4.7 ±0.5 2.7 ±0.5 1) 0.1 17 0...0.1 5 7 x 0.6 +0.1 -0.03 6 x 1.27 0.25 M AB 2.4 0.5 ±0.15 8° MAX. 0.1 B 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal sufaces tin plated, except area of cut . Footprint 10.8 16.15 4.6 9.4 0.47 0.8 8.42 HLGF1019 You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. SMD = Surface Mounted Device Data Sheet 23 Dimensions in mm Rev. 1.1, 2004-12-07 High Current PN Half Bridge BTS 7960 Package Outlines P-TO-220-7 8 Package Outlines P-TO-220-7 P-TO-220-7 (Plastic Transistor Single Outline Package) 17.5 ±0.3 15.6 ±0.3 13 9.9±0.2 A 9 . 5±0. 2 7.5 6.6 4.4 1 .3-+00..012 B 3.3 ±0.3 9.2 ±0.2 3.7 -0.15 2.8 ±0.2 C 17 0...0.15 7 x 0.6±0.1 6 x 1.27 0.25 M AB C 8.6 ±0.3 10.2 ±0.3 0.05 1) 2.4 4 .5±0. 3 8.4±0.3 0 .5±0. 1 1) Shear and punch direction no burrs this surface Back side, heatsink contour All m etal surfaces tin plated, except area of cut. You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Data Sheet 24 Dimensions in mm Rev. 1.1, 2004-12-07 9 Revision History High Current PN Half Bridge BTS 7960 Revision History Revision Date n.a. 2004-03-18 0.9 2004-10-10 1.0 2004-11-30 1.1 2004-12-07 Changes / Comments Target Data Sheet Target Data Sheet converted to new layout Preliminary Data Sheet “Preliminary” removed; No other changes Data Sheet 25 2004-12-07 High Current PN Half Bridge BTS 7960 Edition 2004-12-07 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2004-12-07. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 26 2004-12-07 http://www.infineon.com Published by Infineon Technologies AG

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