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对此波形进行编程

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标签: TCD1208AP

TCD1208AP

对此波形进行编程在此程序里的利用率

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TOSHIBA CCD LINEAR IMAGE SENSOR CCDCharge Coupled Device TCD1208AP TCD1208AP The TCD1208AP is a high sensitive and low dark current 2160 element image sensor The sensor can be used for facsimile imagescanner and OCR The device contains a row of 2160 photodiodes which provide a 8 lines mm 200 DPI across a B4 size paper The device is operated by 5V pulse and 5V power supply FEATURES Number of Image Sensing Elements 2160 Image Sensing Element Size 14m by 14m on 14m centers ......

TCD1208AP
TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device)
TCD1208AP
The TCD1208AP is a high sensitive and low dark current 2160−
element image sensor. The sensor can be used for facsimile,
imagescanner and OCR. The device contains a row of 2160
photodiodes, which provide a 8 lines / mm (200 DPI) across a B4
size paper. The device is operated by 5V (pulse), and 5V power
supply.
FEATURES
l
Number of Image Sensing Elements : 2160
l
Image Sensing Element Size
l
Photo Sensing Region
l
Clock
l
Package
: 14µm by 14µm on
14µm centers
: High sensitive, Low
dark current
: 2 phase (5V)
: 22 pin DIP (T−CAPP)
TOSHIBA−CCD−ADVANCED−PLASTIC−PACKAGE
Weight: 2.7g (Typ.)
MAXIMUM RATINGS
(Note 1)
PIN CONNECTION
CHARACTERISTIC
Clock Pulse Voltage
Shift Pulse Voltage
Reset Pulse Voltage
Power Supply Voltage
Operating Temperature
Storage Temperature
SYMBOL
V
φ
V
SH
V
RS
V
OD
T
opr
T
stg
−25~60
−40~100
°C
°C
−0.3~8
V
RATING
UNIT
Note 1: All voltage are with respect to SS terminals (Ground).
(TOP VIEW)
000707EBA2
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
2001-02-16
1/13
TCD1208AP
CIRCUIT DIAGRAM
PIN NAMES
φ
1
φ
2
Clock (Phase 1)
Clock (Phase 2)
Shift Gate
Reset Gate
Signal Output
Compensation Output
Power
Ground
Non Connection
SH
RS
OS
DOS
OD
SS
NC
000707EBA2
·
The products described in this document are subject to the foreign exchange and foreign trade laws.
·
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
·
The information contained herein is subject to change without notice.
2001-02-16
2/13
TCD1208AP
(Ta = 25°C, V
OD
= 5V, V
φ
= V
SH
= V
RS
= 5V (PULSE), f
φ
= 0.5MHz, f
RS
= 1MHz,
LOAD RESISTANCE = 100kΩ, t
INT
(INTEGRATION TIME) = 10ms,
LIGHT SOURCE = DAYLGIHT FLUORESCENT LAMP)
CHARACTERISTIC
Sensitivity
Photo Response Non Uniformity
Register Imbalance
Saturation Output Voltage
Saturation Exposure
Dark Signal Voltage
Dark Signal Non Uniformity
DC Power Dissipation
Total Transfer Efficiency
Output Impedance
Dynamic Range
DC Signal Output Voltage
DC Compensation Output Voltage
DC Mismatch Voltage
Random Noise
SYMBOL
R
PRNU (1)
PRNU (3)
RI
V
SAT
SE
V
DRK
DSNU
P
D
TTE
Z
O
DR
V
OS
V
DOS
|V
OS
−V
DOS
|
ND
σ
MIN
82
0.6
92
3
3
TYP.
110
7
1.5
0.01
2
3
50
750
3.5
3.5
50
1.7
MAX
138
10
16
3
6
7
100
1
4.5
4.5
100
UNIT
V / lx·s
%
mV
%
V
lx·s
mV
mV
mW
%
kΩ
V
V
mV
mV
(Note 8)
(Note 9)
(Note 9)
(Note 11)
(Note 12)
NOTE
(Note 2)
(Note 3)
(Note 10)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
(Note 7)
OPTICAL / ELECTRICAL CHARACTERISTICS
Note 2: Sensitivity for 2854K W−Lamp is 330V / lx·s (Typ.)
Sensitivity for LED (567nm) is 71V / lx·s (Typ.)
Note 3: Measured at 50% of SE (Typ.)
Definition of PRNU: PRNU =
Dc
c
´
100

%

Where
?
is average of total signal outputs and
,?
is the maximum deviation from
?
under uniform
illumination.
Note 4: Measured at 50% of SE (Typ.)
RI is defined as follows:
2159
å
c
n
- c
n
+
1
n
=
1
RI =
´
100

%

2159
´ c
Where
?
n and
?
n+1 are signal outputs of each pixel.
?
is average of total signal outputs.
Note 5: V
SAT
is defined as minimum Saturation Output Voltage of all effective pixels.
Note 6: Definition of SE : SE =
VSAT
R
2001-02-16
3/13
TCD1208AP
Note 7: V
DRK
is defined as average dark signal voltage of all effective pixels.
between V
DRK
and V
MDK
, when V
MDK
is maximum dark voltage.
DSNU is defined as different voltage
Note 8: Definition of DR : DR =
VSAT
VDRK
V
DRK
is proportional to tINT (Integration time).
So the shorter tINT is, the wider DR is.
Note 9: DC Signal Output Voltage and DC Compensation Output Voltage are defined as follows:
Note 10: PRNU (3) is defined as maximum voltage with next pixel where measured 5% of SE (Typ.).
Note 11: V
OD
= 4.7V DC Mismatch Voltage.
2001-02-16
4/13
TCD1208AP
Note 12:
1.
DEFINITION
Random noise is defined as the standard deviation (sigma) of the output level difference between two adjacent
effective pixels under no illumination (i.e. dark condition) calculated by the following procedure.
CALCULATION PROCEDURE
The following is the calculation procedure of random noise.
2.
1)
2)
3)
4)
Two adjacent pixels (pixel n and n+1) in one reading are fixed as measurement points.
Each of the output levels at video output period is averaged over 200 nanosecond period to get Vn and Vn+1.
Vn+1 is subtracted from Vn to get
∆V.
∆V
= Vn−Vn+1
The standard deviation of
∆V
is calculated after procedure 2) and 3) are repeated 30 times (30 readings).
D
V
=
1 30
i
å D
V
30 i
=
1
σ
=
1 30
2
å D
Vi
- D
V
30 j
=
1


5)
Procedure 2), 3) and 4) are repeated 10 times to get 10 sigma values.
s=
1 10
å s
j
10 j
=
1
6)
I
value calculated using the above procedure is observed
2
times larger than that measured relative to the
ground level. So we specify the random noise as the following.
Random noise (N
) =
1
2
I
2001-02-16
5/13
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