The FM25L16 is a 16-kilobit nonvolatile memoryemploying an advanced ferroelectric process. Aferroelectric random access memory or FRAM isnonvolatile and performs reads and writes like aRAM. It provides reliable data retention for 45 yearswhile eliminating the complexities, overhead, andsystem level reliability problems caused byEEPROM and other nonvolatile memories.Unlike serial EEPROMs, the FM25L16 performswrite operations at bus speed. No write delays areincurred. Data is written to the memory arrayimmediately after each byte has been transferred tothe device. The next bus cycle may commencewithout the need for data polling. The product offersvirtually unlimited write endurance, orders ofmagnitude more endurance than EEPROM. FRAMalso exhibits much lower power during writes thanEEPROM.These capabilities make the FM25L16 ideal fornonvolatile memory applications requiring frequentor rapid writes. Examples range from data collection,where the number of write cycles may be critical, todemanding industrial controls where the long writetime of EEPROM can cause data loss.The FM25L16 provides substantial benefits to usersof serial EEPROM as a hardware drop-inreplacement. The FM25L16 uses the high-speed SPIbus, which enhances the high-speed write capabilityof FRAM technology. Device specifications areguaranteed over an industrial temperature range of-40°C to +85°C.
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