64Gb NAND Flash Pad information SK Hynix Confidential Rev04Dec 2014 1 SK Hynix Confidential Datasheet H27QCG8D2FDABCC Document Title 64Gbit NAND Flash Revision History Revision No History Draft Date Remark 00 01 02 03 04 Release Modified Part number Information on page 9 Inserted ReadID on page 10 Inserted VREF pin Add bonding information of 1CE DDP Jun 2014 Jul 2014 Aug 2014 Dec 2014 Dec 2014 Rev04Dec 2014 2 SK Hynix Confidential Datasheet H27QCG8D2FDABCC Key features Multilevel Cel......
64Gb NAND Flash
Pad information
SK Hynix Confidential
Rev_0.4/Dec. 2014
1
SK Hynix Confidential Datasheet
H27QCG8D2FDA-BCC
Document Title
64Gbit NAND Flash
Revision History
Revision No.
0.0
0.1
0.2
0.3
0.4
‐ Release
History
Draft Date
Jun. 2014
Jul. 2014
Aug. 2014
Dec. 2014
Dec. 2014
Remark
‐Modified Part number Information on page 9
‐Inserted ReadID on page 10
‐Inserted VREF pin
‐ Add bonding information of 1CE DDP
Rev_0.4/Dec. 2014
2
SK Hynix Confidential Datasheet
H27QCG8D2FDA-BCC
Key features
■
Multilevel Cell technology
■ NAND INTERFACE
‐ Toggle DDR Command Interface
‐ x8 bus width
‐ Multiplexed Command, Address and data signal port
■ Supply Voltage
Vcc : 2.7V ~ 3.6V, VccQ : 1.7V ~ 1.95V
‐ P/N: H27QCG8D2FDA‐BCC (200Mbps)
■ Organization
‐ (16,384+1,664)bytes x 256pages x (1,024+32)blocks x
2plane
‐ Device size : 2,048+64 Blocks
‐ Page size : 16,384+1,664bytes
‐ Block size : 256pages x (4M+416K) bytes
‐ Plane size : (1,024blocks + 32 Extra block)
■
Page Read / Program Time
‐ Random Read Time(tR) : 50 us (Typ.)
‐ Page Program Time : 1.5 ms (Typ.)
■
Block Erase
‐ Block Erase Time : 5 ms (Typ.)
■
DQ performance
‐ Read cycle time :
tRC = 10ns
■
Single Die Operating Current
‐ Page Read : 50 mA max.
‐ Page Program : 50 mA max.
‐ DQ Burst Read : TBD mA max.
‐ DQ Burst Program: TBD mA max.
‐ BUS Idle : TBD mA max.
‐ Standby : TBD uA max.
■ Package
‐ Wafer
Rev_0.4/Dec. 2014
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SK Hynix Confidential Datasheet
H27QCG8D2FDA-BCC
1. SUMMARY DESCRIPTION
The SKHynix H27QCG8D2FDA‐BCC is suited for high performance applications which use the batteries such as high‐end mobile
solution and PCs data storage solution. The H27QCG8D2FDA‐BCC has a toggle DDR interface.
Operates from a bidirectional DQS : SKHynix NAND Flash technology provides high‐performance NAND Flash memory with an
interface that supports up to 200Mb/s(25MB/s) data read and write throughput.
The high‐speed bandwidth of SKHynix NAND Flash is supported to better support the ongoing shift toward advanced interfaces,
as more mobile and PCs electronics devices requiring added performance and higher densities adopt interfaces such as embed‐
ded NAND solution series and Serial SSD solution series.
1.1. Product List
Table 1‐1. Package product list
200Mbps (max)
P/N
H27QCG8D2FDA‐BCC
Density
8GB (64Gb)
Vcc/VccQ
3.3V / 1.8V
I/O Speed
200Mb/s
# of CE RB#
1CE & 1R/B, single
PACKAGE
Wafer
Rev_0.4/Dec. 2014
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SK Hynix Confidential Datasheet
H27QCG8D2FDA-BCC
1.2. Block Diagram
Figure 1‐1. NAND Flash Die Functional Block Diagram
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