2010 High performance AlGaNGaN HEMTs with
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Vol 31 No 3 Journal of Semiconductors March 2010 High performance AlGaNGaN HEMTs with 24 cid22m sourcedrain spacingcid3 Wang Dongfang王东方1 2 cid142 Wei Ke魏珂1 Yuan Tingting袁婷婷1 2 and Liu Xinyu刘新宇1 1 Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China 2 Graduated University of the Chinese Academy of Sciences Beijing 100049 China Abstract This paper describes the performance of AlGaNGaN HEMTs with 24 cid22m sourcedrain spacing So far these are the smallest sourcedrain spac......
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