Features Floating channel designed for bootstrap operation Fully operational to 600V Tolerant to negative transient voltage dVdt immune Data Sheet No PD60046S IR2104S PbF HALFBRIDGE DRIVER Product Summary VOFFSET 600V max IO VOUT 130 mA 270 mA 10 20V 520 ns tonoff typ 680 150 ns Deadtime typ Gate drive supply range from 10 to 20V Undervoltage lockout 33V 5V and 15V input logic compatible Crossconduction prevention logic Internally set deadtime High side output in phase with input Sh......
Data Sheet No. PD60046-S
IR2104
(S) & (PbF)
HALF-BRIDGE DRIVER
Features
•
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Internally set deadtime
High side output in phase with input
Shut down input turns off both channels
Matched propagation delay for both channels
Also available LEAD-FREE
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Deadtime (typ.)
600V max.
130 mA / 270 mA
10 - 20V
680 & 150 ns
520 ns
•
•
•
•
•
•
•
•
•
Packages
Description
The IR2104(S) are high voltage, high speed power
8 Lead SOIC
MOSFET and IGBT drivers with dependent high and low
8 Lead PDIP
IR2104S
side referenced output channels. Proprietary HVIC and
IR2104
latch immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates from 10 to 600 volts.
Typical Connection
up to 600V
V
CC
V
CC
IN
SD
V
B
HO
V
S
LO
TO
LOAD
IN
SD
COM
(Refer to Lead Assignment for correct pin configuration) This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
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1
IR2104
(S) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
IN
dV
s
/dt
P
D
Rth
JA
T
J
T
S
T
L
Definition
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage (IN &
SD
)
Allowable offset supply voltage transient
Package power dissipation @ T
A
≤
+25°C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
(8 lead PDIP)
(8 lead SOIC)
(8 lead PDIP)
(8 lead SOIC)
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
-0.3
—
—
—
—
—
—
-55
—
Max.
625
V
B
+ 0.3
V
B
+ 0.3
25
V
CC
+ 0.3
V
CC
+ 0.3
50
1.0
0.625
125
200
150
150
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
IN
T
A
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage (IN &
SD
)
Ambient temperature
Min.
V
S
+ 10
Note 1
V
S
10
0
0
-40
Max.
V
S
+ 20
600
V
B
20
V
CC
V
CC
125
Units
V
°C
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
2
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IR2104
(S) & (PbF)
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 1000 pF and T
A
= 25°C unless otherwise specified.
Symbol
ton
toff
tsd
tr
tf
DT
MT
Definition
Turn-on propagation delay
Turn-off propagation delay
Shutdown propagation delay
Turn-on rise time
Turn-off fall time
Deadtime, LS turn-off to HS turn-on &
HS turn-on to LS turn-off
Delay matching, HS & LS turn-on/off
Min. Typ. Max. Units Test Conditions
—
—
—
—
—
400
—
680
150
160
100
50
520
—
820
220
220
170
90
650
60
ns
V
S
= 0V
V
S
= 600V
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
V
IH
V
IL
V
SD,TH+
V
SD,TH-
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
V
CCUV+
V
CCUV-
I
O+
I
O-
Definition
Logic “1” (HO) & Logic “0” (LO) input voltage
Logic “0” (HO) & Logic “1” (LO) input voltage
SD input positive going threshold
SD input negative going threshold
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Logic “1” input bias current
Logic “0” input bias current
V
CC
supply undervoltage positive going
threshold
V
CC
supply undervoltage negative going
threshold
Output high short circuit pulsed current
Output low short circuit pulsed current
Min. Typ. Max. Units Test Conditions
3
—
3
—
—
—
—
—
—
—
—
8
7.4
130
270
—
—
—
—
—
—
—
30
150
3
—
8.9
8.2
210
360
—
0.8
—
0.8
100
100
50
55
270
10
1
9.8
V
9
—
—
mA
V
O
= 0V
PW
≤
10
µs
V
O
= 15V
PW
≤
10
µs
µA
mV
V
V
CC
= 10V to 20V
V
CC
= 10V to 20V
V
CC
= 10V to 20V
V
CC
= 10V to 20V
I
O
= 0A
I
O
= 0A
V
B
= V
S
= 600V
V
IN
= 0V or 5V
V
IN
= 0V or 5V
V
IN
= 5V
V
IN
= 0V
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3
IR2104
(S) & (PbF)
Functional Block Diagram
VB
HV
LEVEL
SHIFT
Q
PULSE
FILTER
R
S
VS
HO
IN
PULSE
GEN
DEAD TIME &
SHOOT-THROUGH
PREVENTION
UV
DETECT
VCC
SD
LO
COM
Lead Definitions
Symbol Description
IN
Logic input for high and low side gate driver outputs (HO and LO), in phase with HO
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