13001三极管参数:TO-251 Plastic-Encapsulate Transistors unless otherwise specified）Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO Ic= 100μA ，IE=0 600 VCollector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0 400 VEmitter-base breakdown voltage V(BR)EBO IE= 100 μA，IC=0 7 VCollector cut-off current ICBO VCB= 600 V , IE=0 100 μACollector cut-off current ICEO VCE= 400 V , IB=0 200 μAEmitter cut-off current IEBO VEB= 7 V , IC=0 100 μAhFE（1） VCE= 20 V, IC= 20mA 10 40DC current gainhFE（2） VCE= 10V, IC= 0.25 mA 5Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 VBase-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA 1.2 VBase-emitter voltage VBE IE= 100 mA, 1.1 V
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