DESSIS–Laser
Advanced Semiconductor Laser Simulator
DESSIS–Laser is the ISE laser simulator for use in a wide range
of laser structures, including edge-emitting bulk and quantum well,
Fabry–Perot and DFB laser diodes, vertical-cavity surface-emitting
lasers (VCSELs) and light-emitting diodes (LEDs), and materials
including III–V binary, ternary, and quaternary materials.
DESSIS–Laser brings the power of the leading device simulator
DESSIS to the laser community. Comprehensive charge carrier
transport equations are solved self-consistently with the optical
mode and photon transport equations, facilitating the analysis of
nonlinear effects such as the degradation of laser performance
due to the heating effects and the modulation of the refractive
index by the injected current.
Typical simulation results include laser diode current–voltage
and output power characteristics, near-field and far-field
patterns, optical gain and other various distributions inside the
laser structure, such as optical wavelength, loss, modal gain,
spontaneous emission, current-dependent refractive index, and
transient light power response.
DESSIS–Laser is fully integrated into the ISE TCAD tool suite
with its user-friendly work environment, which makes structure
generation, parameterization, meshing, and visualization fast and
efficient.
Non-isothermal
Isothermal
0.001
Optical Power [W]
0.0005
0
0.01
0.02
Current [A]
VCSEL optical power versus anode current for two simulation conditions:
isothermal (green) and self-consistent optics, electronics, and lattice
heating effect (red)
Distribution of optical intensity inside VCSEL structure as a result of
vectorial optical simulator LUMI
ISE
AD
TC
Development, Modeling, and Optimization of Microelectronic
Processes, Devices, Circuits, and Systems
Integrated Systems Engineering
Features
• Fully integrated into the 1D/2D/3D device simulator
DESSIS
• ISE TCAD environment is used for structure generation,
parameterization, meshing, and visualization
• Optical mode solver is based on scalar and vector
Helmholtz wave equation
• Comprehensive carrier transport is solved
self-consistently with the optical equations
• Dedicated quantum well model for calculation
of subbands
• Scattering transport model for quantum wells
• Various gain-broadening models
• Self-consistent, nonisothermal simulations based on
drift-diffusion or quasi-hydrodynamic approaches
• Modification of quantum-well band structure due
to strain
• DC and transient analyses
• Polarization-dependent optical gain
Real part of complex-vector optical-field distribution for nonsymmetric
InGaAsP multi–quantum well edge-emitting laser; radiation leakage
towards the GaAs high refractive-index cap layer is clearly visible
Capabilities
• Edge-emitting Fabry–Perot bulk, single and multiple
quantum well lasers
• Buried layer edge-emitting lasers
• Tunable twin-guide (TTG) DFB lasers
• VCSELs
• Light-emitting diodes (LEDs)
• Wide spectrum of III–V binary, ternary, and quaternary
materials (such as GaAs, InP, InGaAs, GaInP, AlGaAs,
InGaAsP, and AlGaInP)
Main Results
• Laser diode current–voltage (I–V) and laser output power
versus current (P–I) characteristics
• Near-field and far-field patterns for fundamental and
high-order optical modes
• Gain spectrum
• LED light extraction efficiency, output power, and mean
wavelength
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Schematic cross section of TTG DFB laser structure with refractive
index distribution.
Inset:
Active layer structure including seven InGaAsP
quantum wells (QWs), separated by higher band-gap barriers.
½½½½
• Full set of the distributions inside the laser structure (such
as carrier concentrations, electrostatic potential, band
diagrams, lattice temperature, carrier energies, current
densities, and generation–recombination rates)
• Wavelength, optical loss, modal optical gain, spontaneous
emission spectrum, and effective refractive index depending
on current
• Hole and electron leakage currents
• Light power transient response on the bias pulse
Switzerland
ISE Integrated Systems
Engineering AG
Balgriststrasse 102
CH-8008 Zürich
Switzerland
Phone: +41 1 389 9700
Fax:
+41 1 389 9797
Email: sales.eu@ise.ch
USA
Integrated Systems
Engineering, Inc.
111 North Market Street, Suite 710
San Jose, CA 95113
USA
Phone: +1 408 918 6300
Fax:
+1 408 918 6306
Email: sales.us@ise.com
Japan
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TTG DFB laser
wavelength dependency
on a tuning current for
different DFB grating
periods
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Taiwan
ISE Integrated Systems
Engineering AG, Taiwan Branch
2nd Floor, No. 15, Lane 6
Jinshan 6th Street
Hsinchu 300, Taiwan
Phone: +886 3 567 0500
Fax:
+886 3 579 0546
Email: sales.tw@ise.com
Korea
ISE Integrated Systems
Engineering AG, Korea Branch
Jeongjoo Building, Suite 602
1451-38 Seocho-dong, Seocho-ku
Seoul 137-866, Korea
Phone: +82 2 525 9117
Fax:
+82 2 525 0931
Email: sales.kr@ise.com
ISE Japan Ltd.
5-1, Marunouchi 1-Chome
Chiyoda-ku
Tokyo 100-0005
Japan
Phone: +81 3 5220 3543
Fax:
+81 3 3282 7623
Email: sales.jp@ise.com
www.ise.ch | www.ise.com
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