上海双岭电子有限公司
CC4010
HEX BUFFER/CONVERTER (NON INVERTING)
s
s
s
s
s
s
s
s
s
PROPAGATION DELAY TIME :
t
PD
= 50ns (Typ.) at V
DD
= 10V C
L
= 50pF
HIGH TO LOW LEVEL LOGIC CONVERSION
MULTIPLEXER: 1 TO 6 OR 6 TO 1
HIGH ”SINK” AND ”SOURCE” CURRENT
CAPABILITY
QUIESCENT CURRENT SPECIFIED UP TO
20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B ” STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES”
DIP
ORDER CODES
PACKAGE
DIP
TUBE
CC4010
T&R
DESCRIPTION
The CC4010 is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
It is an non inverting Hex Buffer/Converter and
can be used as CMOS to TTL logic level converter
as current ”sink” or ”source” driver or as
multiplexer (1 to 6).
It is a preferred replacement of CC4050 in
buffer applications.
PIN CONNECTION
1/4
CC4010
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
Data Inputs
Data Outputs
Not Connected
Positive Supply Voltage
Negative Supply Voltage
Positive Supply Voltage
3, 5, 7, 9, 11, A, B, C, D, E,
14
F
2, 4, 6, 10, G, H, I, J, K,
12, 15
L
13
NC
V
CC
1
8
16
V
SS
V
DD
TRUTH TABLE
INPUTS
A, B, C, D, E, F
L
H
OUTPUTS
G, H, I, J, K, L
L
H
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
V
I
I
I
P
D
T
op
T
stg
Supply Voltage
DC Input Voltage
DC Input Current
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
Storage Temperature
Parameter
Value
-0.5 to +20
-0.5 to V
DD
+ 0.5
±
10
200
100
-55 to +125
-65 to +150
Unit
V
V
mA
mW
mW
°C
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Supply Voltage
Input Voltage
Operating Temperature
Parameter
Value
3 to 1 8
0 to V
DD
-55 to 125
Unit
V
V
°C
2/4
CC4010
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
I
(V)
0/5
0/10
0/15
0/18
0/5
0/10
0/15
5/0
10/0
15/0
0.5/4.5
1/9
1.5/13.5
4.5/0.5
9/1
13.5/1.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
V
O
(V)
V
DD
|I
O
|
=
V
CC
(µA)
(V)
5
10
15
18
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
10
15
18
T
A
= 25°C
Min.
Typ.
0.02
0.02
0.02
0.04
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
-0.8
-0.2
-0.45
-1.5
3
8
24
-1.6
-0.4
-0.9
-3
4
10
36
±10
-5
5
±0.1
7.5
-0.65
-0.18
-0.38
-1.25
2.4
6.4
19
±1
3.5
7
11
1.5
3
4
-0.65
-0.18
-0.38
-1.25
2.4
6.4
19
±1
Max.
1
2
4
20
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
V
Value
-40 to 85°C
Min.
Max.
30
60
120
600
4.95
9.95
14.95
0.05
0.05
0.05
-55 to 125°C
Min.
Max.
30
60
120
600
Unit
I
L
Quiescent Current
µA
V
OH
High Level Output
Voltage
Low Level Output
Voltage
High Level Input
Voltage
Low Level Input
Voltage
Output Drive
Current
V
OL
V
IH
V
IL
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
V
V
V
I
OH
I
OL
Output Sink
Current
Input Leakage
Current
Input Capacitance
0/5
0/5
0/10
0/15
0/5
0/10
0/15
0/18
mA
mA
µA
pF
I
I
C
I
Any Input
Any Input
The Noise Margin for both ”1” and ”0” level is: 1V min. with V
DD
=5V, 2V min. with V
DD
=10V, 2.5V min. with V
DD
=15V
3/4
CC4010
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, R
L
= 200KΩ, t
r
= t
f
= 20 ns)
Test Condition
Symbol
t
TLH
Parameter
Output Transition Time
V
DD
(V)
5
10
15
5
10
15
5
10
10
15
15
5
10
10
15
15
V
I
(V)
5
10
15
5
10
15
5
10
10
15
15
5
10
10
15
15
V
CC
(V)
5
10
15
5
10
15
5
10
5
15
5
5
10
5
15
5
Min.
Value (*)
Typ.
150
75
55
35
20
15
100
50
50
35
35
65
35
30
25
20
Max.
350
15
110
70
40
30
200
100
100
70
70
130
70
70
50
40
ns
Unit
t
THL
Output Transition Time
ns
t
PLH
Propagation Delay Time
ns
t
PHL
Propagation Delay Time
ns
(*) Typical temperature coefficient for all V
DD
value is 0.3 %/°C.
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= 200KΩ
R
T
= Z
OUT
of pulse generator (typically 50Ω)
4/4
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