The FM25040A is a 4-kilobit nonvolatile memoryemploying an advanced ferroelectric process. Aferroelectric random access memory or FRAM isnonvolatile but operates in other respects as a RAM.It provides reliable data retention for 45 years whileeliminating the complexities, overhead, and systemlevel reliability problems caused by EEPROM andother nonvolatile memories.Unlike serial EEPROMs, the FM25040A performswrite operations at bus speed. No write delays areincurred. Data is written to the memory array in thecycle after it has been successfully transferred to thedevice. The next bus cycle may commenceimmediately without the need for data polling. Inaddition the product offers substantial writeendurance compared with other nonvolatilememories. The FM25040A is capable of supportingup to 1012 read/write cycles -- far more than mostsystems will require from a serial memory.These capabilities make the FM25040A ideal fornonvolatile memory applications requiring frequentor rapid writes. Examples range from data collection,where the number of write cycles may be critical, todemanding industrial controls where the long writetime of EEPROM can cause data loss.The FM25040A provides substantial benefits to usersof serial EEPROM, in a hardware drop-inreplacement. The FM25040A uses the high-speedSPI bus which enhances the high-speed writecapability of FRAM technology. Devicespecifications are guaranteed over an industrialtemperature range of -40°C to +85°C.
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