MRFE6VS25NFreescale Semiconductor Technical DataDocument Number: MRFE6VS25N Rev. 0, 6/2012RF Power LDMOS TransistorHigh Ruggedness N--Channel Enhancement--Mode Lateral MOSFETMRFE6VS25NR1RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale’s enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 VoltsFrequency (MHz) 1.8 to 30 (1) 512 512 1030 Signal Type Two--Tone (10 kHz spacing) Pulse (100 μsec, 20% Duty Cycle) CW CW Pout (W) 25 PEP 25 Peak 25 25 Gps (dB) 25 25.4 25.5 22.5 ηD (%) 51 74.5 74.7 60 IMD (dBc) --30 ― ― ―1.8-2000 MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSIST……
猜您喜欢
推荐内容
开源项目推荐 更多
热门活动
热门器件
用户搜过
随便看看
热门下载
热门文章
热门标签
评论