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GaN transistors for efficient power conversion Third Edition

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This  updated,  third  edition  of  a  popular  book  on  GaN  transistors  for  efficient  power  conversion  has  been  substantially  expanded  to  keep  students  and  practicing  power  conversion  engineers  ahead  of  the  learning  curve  in  GaN  technology  advancements.  Acknowledging  that  GaN  transistors  are  not  one-to-one  replacements  for  the  current  MOSFET  technology,  this  book  serves  as  a  practical  guide  for  understanding  basic  GaN  transistor  construction,  characteristics,  and  applications.  Included  are  discussions  on  the  fundamental  physics  of  these  power  semiconductors,  layout,  and  other  circuit  design  considerations,  as  well  as  specific  application  examples  demonstrating  design  techniques  when  employing  GaN  devices.

GaN  Transistors  for  Efficient  Power  Conversion,  Third  Edition  brings  key  updates  to  the  chapters  of  Driving  GaN  Transistors;  Modeling,  Simulation,  and  Measurement  of  GaN  Transistors;  DC-DC  Power  Conversion;  Envelope  Tracking;  and  Highly  Resonant  Wireless  Energy  Transfer.  It  also  offers  new  chapters  on  Thermal  Management,  Multilevel  Converters,  and  Lidar,  and  revises  many  others  throughout.

Written  by  leaders  in  the  power  semiconductor  field  and  industry  pioneers  in  GaN  power  transistor  technology  and  applications

Updated  with  35%  new  material,  including  three  new  chapters  on  Thermal  Management,  Multilevel  Converters,  Wireless  Power,  and  Lidar

Features  practical  guidance  on  formulating  specific  circuit  designs  when  constructing  power  conversion  systems  using  GaN  transistors

A  valuable  resource  for  professional  engineers,  systems  designers,  and  electrical  engineering  students  who  need  to  fully  understand  the  state-of-the-art

GaN  Transistors  for  Efficient  Power  Conversion,  Third  Edition  is  an  essential  learning  tool  and  reference  guide  that  enables  power  conversion  engineers  to  design  energy-efficient,  smaller,  and  more  cost-effective  products  using  GaN  transistors.

GaN Transistors for Efficient Power Conversion
GaN Transistors for Efficient Power Conversion
Third Edition
Alex Lidow
Efficient Power Conversion Corporation (EPC)
USA
Michael de Rooij
Johan Strydom
Efficient Power Conversion Corporation (EPC)
USA
Kilby Labs
Texas Instruments
USA
David Reusch
VPT, Inc.
USA
John Glaser
Efficient Power Conversion Corporation (EPC)
USA
This edition first published 2020
© 2020 John Wiley & Sons Ltd
Edition History
1e 2012 Power Conversion Publications, 2e 2015 Wiley
All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any
form or by any means, electronic, mechanical, photocopying, recording or otherwise, except as permitted by law. Advice
on how to obtain permission to reuse material from this title is available at http://www.wiley.com/go/permissions.
The right of Alex Lidow, Michael de Rooij, Johan Strydom, David Reusch and John Glaser to be identified as the
authors of this work has been asserted in accordance with law.
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John Wiley & Sons, Inc., 111 River Street, Hoboken, NJ 07030, USA
John Wiley & Sons Ltd, The Atrium, Southern Gate, Chichester, West Sussex, PO19 8SQ, UK
Editorial Office
The Atrium, Southern Gate, Chichester, West Sussex, PO19 8SQ, UK
For details of our global editorial offices, customer services, and more information about Wiley products visit us at
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appears in standard print versions of this book may not be available in other formats.
Limit of Liability/Disclaimer of Warranty
In view of ongoing research, equipment modifications, changes in governmental regulations, and the constant flow
of information relating to the use of experimental reagents, equipment, and devices, the reader is urged to review and
evaluate the information provided in the package insert or instructions for each chemical, piece of equipment, reagent,
or device for, among other things, any changes in the instructions or indication of usage and for added warnings
and precautions. While the publisher and authors have used their best efforts in preparing this work, they make no
representations or warranties with respect to the accuracy or completeness of the contents of this work and specifically
disclaim all warranties, including without limitation any implied warranties of merchantability or fitness for a particular
purpose. No warranty may be created or extended by sales representatives, written sales materials or promotional
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Library of Congress Cataloging‐in‐Publication Data
Names: Lidow, Alex, author. | de Rooij, Michael, author. | Strydom, Johan,
author. | Reusch, David, author. | Glaser, John (Electrical engineer), author.
Title: GaN transistors for efficient power conversion / Alex Lidow, Ph.D.,
Efficient Power Conversion Corporation (EPC), USA, Michael de Rooij, Ph.D.,
Efficient Power Conversion Corporation (EPC), USA, Johan Strydom, Ph.D.,
Kilby Labs, Texas Instruments, USA, David Reusch, Ph.D.,
VPT, Inc., USA, John Glaser, Ph.D.,
Efficient Power Conversion Corporation (EPC), USA.
Description: 3rd edition. | Hoboken, NJ : John Wiley & Sons, Inc., 2020. |
Includes bibliographical references and index. |
Identifiers: LCCN 2019015122 (print) | LCCN 2019017751 (ebook) | ISBN 9781119594376
(Adobe PDF) | ISBN 9781119594420 (ePub) | ISBN 9781119594147 (hardback)
Subjects: LCSH: Field-effect transistors–Materials. | Power transistors–Materials. | Gallium nitride.
Classification: LCC TK7871.95 (ebook) | LCC TK7871.95 .G355 2020 (print) | DDC 621.3815/284–dc23
LC record available at https://lccn.loc.gov/2019015122
Cover Design: Wiley
Cover Image: Courtesy of Efficient Power Conversion Corporation
Set in 10/12pt Warnock by SPi Global, Pondicherry, India
10 9 8
7
6 5
4 3 2
1
In memory of Eric Lidow, the original power conversion pioneer.
vii
Contents
Foreword
xv
Acknowledgments
xvii
1
1.1
1.2
1.3
1.3.1
1.3.2
1.3.3
1.3.4
1.4
1.4.1
1.4.2
1.4.3
1.4.4
1.4.5
1.5
1.5.1
1.5.2
1.5.3
1.5.4
1.6
1.7
2
1
Silicon Power Metal Oxide Silicon Field Effect Transistors 1976–2010
1
The Gallium Nitride Journey Begins
2
GaN and SiC Compared with Silicon
2
Bandgap (E
g
)
3
Critical Field (E
crit
)
3
On‐Resistance (R
DS(on)
)
4
The Two‐Dimensional Electron Gas (2DEG)
4
The Basic GaN Transistor Structure
6
Recessed Gate Enhancement‐Mode Structure
7
Implanted Gate Enhancement‐Mode Structure
8
pGaN Gate Enhancement‐Mode Structure
8
Hybrid Normally Off Structures
8
Reverse Conduction in HEMT Transistors
10
Building a GaN Transistor
11
Substrate Material Selection
11
Growing the Heteroepitaxy
12
Processing the Wafer
12
Making Electrical Connection to the Outside World
13
GaN Integrated Circuits
15
Summary
21
References
21
GaN Technology Overview
2.1
2.2
2.2.1
2.3
2.4
Introduction
25
Device Ratings
25
Drain‐Source Voltage
25
On‐Resistance (R
DS(on)
)
30
Threshold Voltage
33
GaN Transistor Electrical Characteristics
25
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