2.2A, 200V, 1.500 Ohm, N-ChannelPower MOSFETThis N-Channel enhancement mode silicon gate power fieldeffect transistor is an advanced power MOSFET designed,tested, and guaranteed to withstand a specified level ofenergy in the breakdown avalanche mode of operation. All ofthese power MOSFETs are designed for applications suchas switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive power.These types can be operated directly from integratedcircuits.Formerly developmental type TA17442.
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