The K6R1016V1D is a 1,048,576-bit high-speed Static RandomAccess Memory organized as 65,536 words by 16 bits.The K6R1016V1D uses 16 common input and output lines andhas at output enable pin which operates faster than addressaccess time at read cycle. Also it allows that lower and upperbyte access by data byte control (UB, LB). The device isfabricated using SAMSUNG¢s advanced CMOS process anddesigned for high-speed circuit technology. It is particularly wellsuited for use in high-density high-speed system applications.The K6R1016V1D is packaged in a 400mil 44-pin plastic SOJor TSOP2 forward or 48-TBGA.
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