MWE6IC9100NFreescale Semiconductor Technical DataDocument Number: MWE6IC9100N Rev. 2, 6/2007RF LDMOS Wideband Integrated Power AmplifiersThe MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Final Application Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, Full Frequency Band (869 - 960 MHz) Power Gain ― 33.5 dB Power Added Efficiency ― 54% GSM EDGE Application Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 870 mA, Pout = 50 Watts Avg., Full Frequency Band (869 - 960 MHz) Power Gain ― 35.5 dB Power Added Efficiency ― 39% Spectral Regrowth @ ……
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