SCS206 SiC肖特基二极管

　　因为Total  Capacitive  Charge（Qc）小、可以降低开关损失，实现高速开关。而且，Si快速恢复二极管的trr会随着温度上升而增大，而SiC则可以维持大体一定的特性。

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SCS206AGHR SiC Schottky Barrier Diode VR IF QC 650V 6A 9nC lFeatures 1 Shorter recovery time 2 Reduced temperature dependence 3 Highspeed switching possible lConstruction Silicon carbide epitaxial planer schottky diode lAECQ101 Qualified TO220AC 1 lInner circuit 3 2 1 1 Cathode 2 Cathode 3 Anode 2 3 lPackaging specifications Packaging Tube Reel size mm Tape width mm Type Basic ordering unit pcs Taping code Marking 50 C SCS206AG lAbsolute maximum ratings Tj 25C Parameter Symbol Val......