Graphene is the thinnest electronic material,
merely one atom thick, with very
high carrier mobilities, and therefore it
should enable transistors operating at very high
frequencies (1–3). Here, we present field-effect
transistors (FETs) fabricated on a 2-inch graphene
wafer (Fig. 1A) with a cutoff frequency in the
radio frequency range, as high as 100 GHz.
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