demonstrate vertical graphene-base hotelectron
transistors (GB-HETs) with a variety of structures
and material parameters. Our GB-HETs exhibit a current
saturation with a high current on−off ratio (>105), which results
from both the vertical transport of hot electrons across the
ultrathin graphene base and the filtering of hot electrons
through a built-in energy barrier. The influences of the materials
and their thicknesses used for the tunneling and filtering barriers
on the common-base current gain α are studied. The
optimization of the SiO2 thickness and using HfO2 as the
filtering barrier significantly improves the common-base current
gain α by more than 2 orders of magnitude. The results
demonstrate that GB-HETs have a great potential for highfrequency,
high-speed, and high-density integrated circuits.
KEYWORDS: Graphene, hot electron transistor, graphene base,
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