Technical Data Sheet
5mm Phototransistor T-1 3/4
PT331C
Features
․Fast
response time
․High
photo sensitivity
․Pb
free
Descriptions
․PT331C
is a high speed and high sensitive silicon
NPN epitaxial planar phototransistor in a standard 5Φ
package. Due to is water clear epoxy the device is sensitive
to visible and near infrared radiation.
Applications
․Infrared
applied system
․Floppy
disk drive
․Optoelectronic
switch
Device Selection Guide
LED Part No.
PT
Chip
Material
Silicon
Lens Color
Water Clear
Everlight Electronics Co., Ltd.
Device No：DPT-033-001
http:\\www.everlight.com
Prepared date：07-19-2004
Rev 1.3
Page: 1 of 7
Prepared by：Jaine Tsai
PT331C
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.25mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Lead Soldering Temperature
Power Dissipation at (or
below)
25℃ Free Air Temperature
Symbol
V
CEO
V
ECO
I
C
Topr
Tstg
Tsol
Pc
Rating
30
5
20
-25 ~ +85℃
-40 ~ +85℃
260
75
Units
V
V
mA
℃
℃
℃
mW
Notes:
*1:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No：DPT-033-001
http:\\www.everlight.com
Prepared date：07-19-2004
Rev 1.3
Page: 2 of 7
Prepared by：Jaine Tsai
PT331C
Electro-Optical Characteristics (Ta=25℃)
Parameter
Collector – Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark Current
On State Collector Current
Wavelength of
Peak Sensitivity
Rang of Spectral Bandwidth
Symbol
BV
CEO
BV
ECO
V
CE)(sat)
t
r
t
f
I
CEO
I
C(on)
λp
λ
0.5
Condition
I
C
=100μA
Ee=0mW/cm
2
I
E
=100μA
Ee=0mW/cm
2
I
C
=2mA
Ee=1mW/cm
2
V
CE
=5V
I
C
=mA
RL=1000Ω
Ee=0mW/cm
2
V
CE
=20V
Ee=1mW/cm
2
V
CE
=5V
---
---
Min.
30
5
---
---
---
---
0.7
---
---
Typ.
---
---
---
15
15
---
2.5
940
400-1100
Max.
---
---
0.4
---
---
100
---
---
---
nA
mA
nm
nm
Units
V
V
V
μS
Rankings
Parameter
G
H
J
K
L
I
C(ON)
Symbol
Min
0.70
1.14
1.77
2.67
4.18
Max
1.90
2.60
3.61
5.07
7.07
mA
V
CE
=5V
Ee=1mW/c
㎡
Unit
Test Condition
Everlight Electronics Co., Ltd.
Device No：DPT-033-001
http:\\www.everlight.com
Prepared date：07-19-2004
Rev 1.3
Page: 3 of 7
Prepared by：Jaine Tsai
PT331C
Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs.
Ambient Temperature
Fig.2 Spectral Sensitivity
100
80
60
40
20
0
-25
0
25
50
75 85 100
1.0
Ta=25 C
0.8
0.6
0.4
0.2
0
100 300 500 700 900 1100 1300
Fig.3 Relative Collector Current vs.
Ambient Temperature
Fig.4 Collector Current vs.
Irradiance
160
140
120
100
80
60
40
20
0
0
10
20
30
40 50
60
70
2
100
C
10
1
0.1
0.01
0.5
1
1.5
2
3
Everlight Electronics Co., Ltd.
Device No：DPT-033-001
http:\\www.everlight.com
Prepared date：07-19-2004
Rev 1.3
Page: 4 of 7
Prepared by：Jaine Tsai
PT331C
Typical Electro-Optical Characteristics Curves
Fig.5 Collector Dark Current vs.
Ambient Temperature
Fig.6 Collector Current vs.
Collector-Emitter Voltage
10
14
12
10
10
10
8
6
10
4
2
10
0
25
50
75
100
0
0
1
2
3
4
Everlight Electronics Co., Ltd.
Device No：DPT-033-001
http:\\www.everlight.com
Prepared date：07-19-2004
Rev 1.3
Page: 5 of 7
Prepared by：Jaine Tsai
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