The performances of RF power amplifiers for base stationtransceivers results in a tradeoff between linearity, efficiencyand gain. This tradeoff leads to an optimum quiescentcurrent. But the following parameters modify this bias point:temperature range (commonly –40°C/+85°C), supply voltageand bias voltage variations (commonly +/–5%) andmanufacturing spread. The purpose of this paper is topresent a new biasing circuit which minimizes quiescentcurrent variations suitable for LDMOS RF power transistors.
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