IRF9520N使用说明。
文档内容节选
Advanced Process Technology l Dynamic dvdt Rating l 175C Operating Temperature l Fast Switching l PChannel l Fully Avalanche Rated G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area This benefit combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for provides the designer with an extremely efficient and reliable device for use in ......
猜您喜欢
推荐内容
开源项目推荐 更多
热门活动
热门器件
用户搜过
随便看看
热门下载
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
评论