SI2302MAKOSEMI全新推出MOS管 ，封装sot-23。
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FEATURES High dense cell design for extremely low RDSON Rugged and reliable Case Material Molded Plastic Absolute Maximum Ratings TA25oC unless otherwise noted Parameter DrainSource Voltage Gatesource Voltage Drain Current Continuous Drain Current Pulsed a Total Power Dissipation TA25oC Symbol Ratings Unit VDS VGS ID IDM PD 20 8 3 10 125 V V A A W C PlasticEncapsulate Mosfets ME2302 NChannel MOSFET 1Gate 2Source 3Drain SOT23 D S Operating Junction and Storage Temperature Range Tj Tstg 55 to 150 ......
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