Features• 3 Micron Radiation Hardened SOS CMOS• Total Dose 200K RAD (Si)• SEP Effective LET No Upsets: >100 MEV-cm2/mg• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)• Dose Rate Survivability: >1 x 1012 Rads (Si)/s• Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse• Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day(Typ)• Latch-Up Free Under Any Conditions• Military Temperature Range: -55oC to +125oC• Significant Power Reduction Compared to LSTTL ICs• DC Operating Voltage Range: 4.5V to 5.5V• Input Logic Levels- VIL = 30% of VCC Max- VIH = 70% of VCC Min• Input Current Levels Ii ≤ 5μA at VOL, VOH
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