UNISONIC TECHNOLOGIES CO., LTD
75N75
75Amps, 75Volts
N-CHANNEL POWER MOSTFET
DESCRIPTION
The UTC
75N75
is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast
switching speed, low thermal resistance, usually used at telecom
and computer application.
1
Power MOSFET
TO- 251
1
TO-252
1
TO-220
FEATURES
* R
DS(ON)
= 12.5mΩ @V
GS
= 10 V
* Ultra low gate charge ( typical 90 nC )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
1
TO-220F
*Pb-free plating product number: 75N75L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Package
Normal
Lead Free Plating
75N75-TA3-T
75N75L-TA3-T
TO-220
75N75-TF3-T
75N75L-TF3-T
TO-220F
75N75-TM3-T
75N75L-TM3-T
TO-251
75N75-TN3-R
75N75L-TN3-R
TO-252
75N75-TN3-T
75N75L-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
Tube
75N75L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(3) L: Lead Free Plating Blank: Pb/Sn
,
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Copyright © 2005 Unisonic Technologies Co., Ltd.
1 of 8
QW-R502-097,A
75N75
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain to Source Voltage
SYMBOL
V
DSS
Power MOSFET
RATINGS
UNIT
75
V
T
C
= 25℃
75
A
I
D
Continuous Drain Current
T
C
= 100℃
56
A
Drain Current Pulsed (Note 1)
I
DM
300
A
±20
Gate to Source Voltage
V
GS
V
Single Pulsed (Note 2)
E
AS
900
mJ
Avalanche Energy
300
mJ
Repetitive (Note 1)
E
AR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
15
V/ns
T
C
= 25℃
220
W
Total Power Dissipation
P
D
Derating above 25℃
1.4
W/℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
Thermal Resistance Case-Sink
SYMBOL
θ
JA
θ
JC
θ
CS
MIN
TYP
MAX
62.5
0.8
UNIT
℃/W
℃/W
℃/W
0.5
ELECTRICAL CHARACTERISTICS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
SYMBOL
BV
DSS
TEST CONDITIONS
MIN
75
0.08
20
250
100
-100
2.0
12.5
3300
530
80
12
79
80
52
90
20
30
4.0
15
TYP
MAX
UNIT
V
V/℃
µA
µA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
= 0 V, I
D
= 250 µA
I = 1mA,
△
BV
DSS
/△T
J D
Referenced to 25℃
V
DS
= 75 V, V
GS
= 0 V
I
DSS
V
DS
= 75 V, V
GS
= 0 V,
T
J
= 150℃
V
GS
= 20V, V
DS
= 0 V
I
GSS
V
GS
= -20V, V
DS
= 0 V
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 48 A
V
GS
= 0 V, V
DS
= 25 V
f = 1MHz
V
DD
= 38V, I
D
=48A,
V
GS
=10V, (Note 4, 5)
V
DS
= 60V, V
GS
= 10 V
I
D
= 48A, (Note 4, 5)
140
35
45
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QW-R502-097,A
75N75
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
I
S
Pulsed Source Current
I
SM
Diode Forward Voltage
V
SD
I
S
= 48A, V
GS
= 0 V
I
S
= 48A, V
GS
= 0 V
Reverse Recovery Time
t
rr
dI
F
/ dt = 100 A/µs
Reverse Recovery Charge
Q
rr
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=0.24mH, I
AS
=48A, R
G
=20Ω, Starting T
J
=25℃
3. I
SD
≤48A,
di/dt≤300A/µs, V
DD
≤BV
DSS
, Starting T
J
=25℃
4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%
5. Essentially independent of operating temperature.
MIN
Power MOSFET
TYP
MAX
75
300
1.4
UNIT
A
V
ns
µC
90
300
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QW-R502-097,A
75N75
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv
/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4 of 8
QW-R502-097,A
75N75
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DD
Power MOSFET
V
DS
V
GS
R
G
V
DS
90%
10V
Pulse Width
≤
1μs
Duty Factor
≤0.1%
D.U.T.
V
GS
10%
t
D(ON )
t
R
t
D (OFF)
t
F
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
50kΩ
12V
0.2μF
0.3μF
Same Type
as D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
1mA
V
G
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
R
D
V
DD
D.U.T.
10V
t
p
I
AS
t
p
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-097,A
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