• Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 5.7 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 6.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 68 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
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