• High-speed switching • Small gate charge: QSW = 23 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 2.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 136 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
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