This thesis investigates the possibility of realizing bandgap reference crcuits for processes having sub-1V supply voltage. With the scaling of gate oxide thickness supply voltage is getting reduced. But the threshold voltage of transistors is not getting scaled at the same rate as that of the supply voltage. This makes it difficult to incorporate conventional designs of bandgap reference circuits to processes having near to 1V supply voltage. In the first part of the thesis a comprehensive study on existing low voltage bandgap reference circuits is done. Using these ideas a low-power, low-voltage bandgap reference circuit is designed in the second part of the thesis work.
The proposed bandgap reference circuit is capable of generating a reference voltage of 0.730V. The circuit is implemented in 0.18μm standard CMOS technology and operates with 0.9V supply voltage, consuming 5μA current. The circuit achieves 7 ppm/K of temperature coefficient with supply voltage range from 0.9 to 1.5V and temperature range from 0 to 60C.
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