The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 20 June 2007
INCH - POUND
MIL-STD-750E
20 November 2006
SUPERSEDING
MIL-STD-750D
28 FEBRUARY 1995
DEPARTMENT OF DEFENSE
TEST METHOD STANDARD
TEST METHODS FOR SEMICONDUCTOR DEVICES
AMSC N/A
FSC 5961
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MIL-STD-750E
FOREWARD
1. This Standard is approved for use by all Departments and Agencies of the Department of Defense.
2. This entire standard has been revised.
3. Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply
Center Columbus, ATTN: DSCC-VAT, 3990 E. Broad Street, Columbus, OH 43218-5000, or emailed to
semiconductor@dla.mil.
Since contact information can change, you may want to verify the currency of this address
information using the ASSIST Online database at
http://assist.daps.dla.mil.
ii
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MIL-STD-750E
CONTENTS
Section
1.
1.1
1.2
1.2.1
1.2.2
1.3
2.
2.1
2.2
2.2.1
2.2.2
2.3
2.4
3.
3.1
3.1.1
4.
4.1
4.1.1
4.1.2
4.1.3
4.1.3.1
4.1.4
4.2
4.3
4.3.1
4.3.2
4.3.2.1
4.3.2.2
4.3.3
4.3.3.1
4.3.4
4.3.5
4.3.6
4.3.7
4.3.7.1
4.3.7.2
4.4
4.4.1
4.5
4.6
4.7
4.8
4.9
4.10
5.
Paragraph
Page
SCOPE ..................................................................................................................................... 1
Purpose ..................................................................................................................................
Numbering system..................................................................................................................
Classification of tests ..............................................................................................................
Revisions ................................................................................................................................
Method of reference ...............................................................................................................
1
1
1
1
1
APPLICABLE DOCUMENTS.................................................................................................... 2
General ...................................................................................................................................
Government documents..........................................................................................................
Specifications, standards, and handbooks..............................................................................
Other Government documents, drawings, and publications....................................................
Non-Government publications.................................................................................................
Order of precedence ...............................................................................................................
2
2
2
2
3
4
DEFINITIONS ........................................................................................................................... 4
Abbreviations, symbols, and definitions .................................................................................. 4
Abbreviations used in this standard ........................................................................................ 4
GENERAL REQUIREMENTS ................................................................................................... 6
Test conditions........................................................................................................................ 6
Permissible temperature variation in environmental chambers............................................... 6
Electrical test frequency .......................................................................................................... 6
Accuracy ................................................................................................................................. 6
Test methods and circuits ....................................................................................................... 7
Calibration requirements ......................................................................................................... 7
Orientations............................................................................................................................. 7
General precautions................................................................................................................ 8
Transients ............................................................................................................................... 8
Test conditions for electrical measurements ........................................................................... 8
Steady-state dc measurements (method 4000) ....................................................................... 8
Pulse measurements ............................................................................................................... 8
Test circuits............................................................................................................................. 8
Test method variation .............................................................................................................. 8
Soldering................................................................................................................................. 9
Order of connection of leads ................................................................................................... 9
Radiation precautions ............................................................................................................. 9
Handling precautions .............................................................................................................. 9
UHF and microwave devices .................................................................................................. 9
Electrostatic discharge sensitive (ESDS) devices .................................................................. 9
Continuity verification of burn-in and life tests ........................................................................ 9
Bias interruption. ..................................................................................................................... 9
Requirements for HTRB and burn-in ..................................................................................... 10
Bias requirements ................................................................................................................. 10
Destructive tests ................................................................................................................... 11
Nondestructive tests ............................................................................................................. 12
Laboratory suitability ............................................................................................................... 13
Recycled, recovered, or environmentally preferable materials................................................ 13
DETAILED REQUIREMENTS ................................................................................................. 13
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MIL-STD-750E
CONTENTS
Section
6.
6.1
6.2
6.3
6.4
Figure
1.
2.
Paragraph
Page
NOTES..................................................................................................................................... 13
Intended Use.......................................................................................................................... 13
International standardization agreement................................................................................ 13
Subject term (key word) listing ............................................................................................... 13
Changes from previous issue................................................................................................. 13
Page
Orientation of noncylindrical semiconductor device to direction of accelerating force .............. 7
Orientation of cylindrical semiconductor device to direction of accelerating force..................... 8
iv
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MIL-STD-750E
Test Methods
Method number
Title
Environmental tests (1000 series).
1001.2
Barometric pressure (reduced).
1011.1
Immersion.
1015.1
Steady-state primary photocurrent irradiation procedure (electron beam).
1016
Insulation resistance.
1017.1
Neutron irradiation.
1018.3
Internal gas analysis.
1019.5
Steady-state total dose irradiation procedure.
1020.2
Electrostatic discharge sensitivity (ESDS) classification.
1021.3
Moisture resistance.
1022.5
Resistance to solvents.
1026.5
Steady-state operation life.
1027.3
Steady-state operation life (sample plan).
1031.5
High-temperature life (nonoperating).
1032.2
High-temperature (nonoperating) life (sample plan).
1033
Reverse voltage leakage stability
1036.3
Intermittent operation life.
1037.2
Intermittent operation life (sample plan).
1038.4
Burn-in (for diodes, rectifiers, and zeners).
1039.4
Burn-in (for transistors).
1040
Burn-in (for thyristors (controlled rectifiers)).
1041.3
Salt atmosphere (corrosion).
1042.3
Burn-in and life test for power MOSFET's or insulated gate bipolar transistors (IGBT).
1046.3
Salt spray (corrosion).
1048
Blocking life.
1049
Blocking life (sample plan).
1051.6
Temperature cycling (air to air).
1054.1
Potted environment stress test.
1055.1
Monitored mission temperature cycle.
1056.7
Thermal shock (liquid to liquid).
1057.1
Resistance to glass cracking.
1061.1
Temperature measurement, case and stud.
1066.1
Dew point.
1071.8
Hermetic seal.
1080
Single event burnout and single event gate rupture test.
v
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