该参考设计基于UCC27282 120伏半桥MOSFET驱动器和CSD19531 100伏功率MOSFET实现了高频功率级设计。 凭借高效的开关和灵活的VGS工作范围,该设计可减少总体栅极驱动和传导损耗,以实现最佳效率。 该功率级设计可广泛应用于许多空间受限的应用,例如电信砖块功率模块,太阳能逆变器和直流电动机驱动器。
This reference design implements a high-frequencypower stage design based on the UCC27282 120-Vhalf-bridge MOSFET driver and CSD19531 100-Vpower MOSFETs. With efficient switches and flexibleVGS operating range, this design can reduce overallgate drive and conduction losses to achieve optimumefficiency. This power stage design can be widelyapplied to many space-constrained applications suchas telecom brick-power modules, solar inverters, andDC motor drives.
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